Imaging device
First Claim
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1. An imaging device comprising:
- a semiconductor substrate;
a first pixel cell includinga first photoelectric converter in the semiconductor substrate, anda first capacitive element one end of which is electrically connected to the first photoelectric converter; and
a second pixel cell includinga second photoelectric converter in the semiconductor substrate, wherein, an area of the second photoelectric converter is larger than an area of the first photoelectric converter in a plan view,a number of charges generated in the second pixel cell is greater than a number of charges generated in the first pixel cell when the first and second pixel cells receive incident light, anda number of saturation charges of the first pixel cell is greater than a number of saturation charges of the second pixel cell.
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Abstract
In one general aspect, the techniques disclosed here feature an imaging device that includes: a semiconductor substrate; a first pixel cell including a first photoelectric converter in the semiconductor substrate, and a first capacitive element one end of which is electrically connected to the first photoelectric converter; and a second pixel cell including a second photoelectric converter in the semiconductor substrate. An area of the second photoelectric converter is larger than an area of the first photoelectric converter in a plan view.
12 Citations
21 Claims
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1. An imaging device comprising:
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a semiconductor substrate; a first pixel cell including a first photoelectric converter in the semiconductor substrate, and a first capacitive element one end of which is electrically connected to the first photoelectric converter; and a second pixel cell including a second photoelectric converter in the semiconductor substrate, wherein, an area of the second photoelectric converter is larger than an area of the first photoelectric converter in a plan view, a number of charges generated in the second pixel cell is greater than a number of charges generated in the first pixel cell when the first and second pixel cells receive incident light, and a number of saturation charges of the first pixel cell is greater than a number of saturation charges of the second pixel cell. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 21)
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16. An imaging device comprising:
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a semiconductor substrate; a first pixel cell including a first photoelectric converter that is located in the semiconductor substrate and converts incident light into a first charge, a first storage capacitance that is electrically connected to the first photoelectric converter and accumulates at least a part of the first charge, and a first charge detection circuit that is connected to the first storage capacitance and detects the first charge; and a second pixel cell including a second photoelectric converter that is located in the semiconductor substrate and converts incident light into a second charge, a second storage capacitance that is connected to the second photoelectric converter and accumulates at least a part of the second charge, and a second charge detection circuit that is connected to the second storage capacitance and detects the second charge, wherein an area of the second photoelectric converter is larger than an area of the first photoelectric converter in a plan view, and a capacitance value of the first storage capacitance is larger than a capacitance value of the second storage capacitance, a number of charges generated in the second pixel cell is greater than a number of charges generated in the first pixel cell when the first and second pixel cells receive incident light, and a number of saturation charges of the first pixel cell is greater than a number of saturation charges of the second pixel cell. - View Dependent Claims (17, 18)
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19. An imaging device comprising:
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a semiconductor substrate; a first pixel cell including a first photoelectric converter in the semiconductor substrate, and a first capacitive element one end of which is electrically connected to the first photoelectric converter; and a second pixel cell including a second photoelectric converter in the semiconductor substrate, wherein, an area of the second photoelectric converter is larger than an area of the first photoelectric converter in a plan view, the first pixel cell and the second pixel cell directly adjoin each other, the semiconductor substrate includes a region between the first photoelectric converter and the second photoelectric converter, and the first capacitive element at least partly overlaps, in the plan view, with the region. - View Dependent Claims (20)
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Specification