Low temperature poly-silicon thin film transistor and method of manufacturing the same

  • US 10,062,771 B2
  • Filed: 05/05/2016
  • Issued: 08/28/2018
  • Est. Priority Date: 02/19/2016
  • Status: Active Grant
First Claim
Patent Images

1. A low temperature poly-silicon thin film transistor comprising a substrate and a metal induction layer formed on the substrate, wherein the low temperature poly-silicon thin film transistor further comprises:

  • a barrier layer formed on the metal induction layer;

    an amorphous silicon film layer formed on the barrier layer;

    wherein the amorphous silicon film layer being converted into a poly-silicon film layer under the inducing effect of the metal induction layer, and the poly-silicon film layer being an active layer; and

    wherein the metal induction layer is patterned to obtain a patterned metal induction layer.

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