Bonding interface layer

• US 10,079,471 B2
• Filed: 07/08/2016
• Issued: 09/18/2018
• Est. Priority Date: 07/08/2016
• Status: Active Grant

• Current Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Original Assignee: Hewlett Packard Enterprise Development LP (Hewlett-Packard Enterprise Company)
• Inventors: Huang, Xue, Liang, Di
• Primary Examiner(s): Vu, Vu A
• Application Number:
  US15/205,789
• Publication Number:
  US 20180013260A1
• Time in Patent Office: 802 Days
• Field of Search: 372 4501
• CPC Class Codes: H01L 21/187 by direct bonding
• CPC Class Codes: H01L 2224/27452 Chemical vapour deposition [CVD], e.g. laser CVD
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/32505 outside the bonding interface, e.g. in the bulk of the layer connector
• CPC Class Codes: H01L 2224/8301 Cleaning the layer connector, e.g. oxide removal step, desmearing
• CPC Class Codes: H01L 24/27 Manufacturing methods
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/0533 3rd Group
• CPC Class Codes: H01L 2924/0534 4th Group
• CPC Class Codes: H01L 2924/05341 TiO2
• CPC Class Codes: H01L 2924/05342 ZrO2
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/3641 Outgassing
• CPC Class Codes: H01S 5/021 Silicon based substrates
• CPC Class Codes: H01S 5/026 Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers stabilisation of output H01S5/06
• CPC Class Codes: H01S 5/1032 Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure

Abstract

An example device in accordance with an aspect of the present disclosure includes a first layer and a second layer to be bonded to the first layer. The first and second layers are materials that generate gas byproducts when bonded, and the first and/or second layers is/are compatible with photonic device operation based on a separation distance. At least one bonding interface layer is to establish the separation distance for photonic device operation, and is to prevent gas trapping and to facilitate bonding between the first layer and the second layer.

Claims

1. A device comprising:

a first layer formed of a silicon (Si)-based material;

a second layer to be bonded to the first layer, wherein the first and second layers are materials that cause gas byproduct trapping when bonded, and wherein the second layer includes an optical component to interact with the first layer to perform a photonic device operation; and

a bonding interface layer that establishes a separation distance of less than 1,000 nanometers between the first and second layers for the photonic device operation, the bonding interface layer disposed between the first layer and the second layer to prevent void formation and to facilitate bonding between the first layer and the second layer, wherein the bonding interface layer includes a material selected from the group consisting of HfO2, Y2O3, and ZrO2 and serves as a high dielectric constant material for the photonic device operation.

2. The device of claim 1, wherein the optical component of the second layer comprises a photonic laser.

3. The device of claim 1, wherein the second layer is formed as a microring.

4. The device of claim 1, wherein the second layer is formed to include a straight ridge shape.

5. The device of claim 1, wherein the first layer includes a feature for optical mode confinement, to interact optically with the second layer.

6. The device of claim 1, wherein the first layer includes a pattern providing an optical waveguide to interact optically with the second layer.

7. The device of claim 1, wherein the first layer includes a pattern providing an optical grating to interact optically with the second layer.

8. The device of claim 1, wherein the bonding interface layer comprises a dielectric having a dielectric constant greater than 3.9.

9. The device of claim 1, further comprising another bonding interface layer between the first layer and the second layer, wherein the bonding interface layer and the another bonding interface layer establish the separation distance of less than 1,000 nanometers.

10. The device of claim 1, wherein the bonding interface layer is to facilitate the bonding between the first layer and the second layer without performing a plasma treatment.

11. A photonic device comprising:

a first layer including a feature to provide optical interaction;

a second layer to be bonded to the first layer, wherein the second layer includes an optical component to interact with the first layer to perform a photonic device operation based on optical interaction with the feature of the first layer; and

a bonding interface layer disposed between the first layer and the second layer to prevent void formation and to facilitate bonding between the first layer and the second layer, wherein the bonding interface layer establishes a separation distance of less than 1,000 nanometers between the first layer and the second layer for the photonic device operation, and wherein the bonding interface layer includes a material selected from the group consisting of HfO2, Y2O3, and ZrO2 and serves as a high dielectric constant material for the photonic device operation.

12. The photonic device of claim 11, wherein the feature of the first layer comprises an optical waveguide.

13. The photonic device of claim 11, further comprising another bonding interface layer between the first layer and the second layer, wherein the bonding interface layer and the another bonding interface layer establish the separation distance of less than 1,000 nanometers.

14. The photonic device of claim 11, wherein the bonding interface layer is to facilitate the bonding between the first layer and the second layer without performing a plasma treatment.

15. A method comprising:

depositing a bonding interface layer to at least one of a first layer and a second layer of a photonic device to be fabricated; and

wafer bonding the first layer and the second layer together to sandwich the bonding interface layer between the first layer and the second layer, wherein the bonding interface layer prevents void formation and facilitates bonding between the first layer and the second layer, and the bonding interface layer establishes a separation distance of less than 1,000 nanometers between the first layer and the second layer, and serves as a dielectric layer between the first layer and the second layer, and wherein the bonding interface layer includes a material selected from the group consisting of HfO2, Y2O3, and ZrO2 and serves as a high dielectric constant material for a photonic device operation of the photonic device including the first layer and the second layer.

16. The method of claim 15, further comprising patterning the first layer, prior to depositing the material of the bonding interface layer on the first layer, to create a feature in the first layer that is to optically interact with the second layer to provide the photonic device operation.