Data storage method and phase change memory

  • US 10,083,749 B2
  • Filed: 01/23/2017
  • Issued: 09/25/2018
  • Est. Priority Date: 07/24/2014
  • Status: Active Grant
First Claim
Patent Images

1. A method, comprising:

  • obtaining a first to-be-stored data, wherein the first to-be-stored data is multi-bit data;

    generating a first erase pulse signal and a first write signal according to the first to-be-stored data, wherein the first write signal is a signal comprising at least two sequential first pulses and at least one first interval, wherein each pulse of the at least two sequential first pulses is separated from an adjacent pulse of the at least two sequential first pulses by a first interval of the at least one first interval, wherein each first interval of the at least one first interval has a same duration, and wherein the duration of each first interval of the at least one first interval is determined according to the first to-be-stored data;

    applying the first erase pulse signal to a storage unit of a phase change memory to enable the storage unit to change to a crystalline state; and

    applying the first write signal to the storage unit to enable the storage unit to change to a first amorphous state corresponding to a first resistance value, wherein the first amorphous state represents the first to-be-stored data, and wherein the first resistance value is higher than a resistance value of the storage unit in the crystalline state.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×