Optical amplifier including multi-section gain waveguide

• US 10,090,641 B2
• Filed: 11/07/2017
• Issued: 10/02/2018
• Est. Priority Date: 02/05/2014
• Status: Active Grant

• Current Assignee: Openlight Photonics Incorporated
• Original Assignee: Juniper Networks Incorporated
• Inventors: Norberg, Erik, Koch, Brian R., Fish, Gregory Alan
• Primary Examiner(s): Torres, Juan A
• Application Number:
  US15/805,877
• Publication Number:
  US 20180138658A1
• Time in Patent Office: 329 Days
• Field of Search: 398 79
• CPC Class Codes: H01S 5/021 Silicon based substrates
• CPC Class Codes: H01S 5/026 Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers stabilisation of output H01S5/06
• CPC Class Codes: H01S 5/1014 Tapered waveguide, e.g. spotsize converter H01S5/1064 takes precedence
• CPC Class Codes: H01S 5/1028 Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
• CPC Class Codes: H01S 5/1032 Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
• CPC Class Codes: H01S 5/50 Amplifier structures not provided for in groups H01S5/02 - H01S5/30
• CPC Class Codes: H01S 5/5027 Concatenated amplifiers, i.e. amplifiers in series or cascaded
• CPC Class Codes: H04B 10/25 Arrangements specific to fibre transmission
• CPC Class Codes: H04B 10/66 Non-coherent receivers, e.g. using direct detection
• CPC Class Codes: H04J 14/02 Wavelength-division multiplex systems

Abstract

Described herein are methods, systems, and apparatuses to utilize a semiconductor optical amplifier (SOA) comprising a silicon layer including a silicon waveguide, a non-silicon layer disposed on the silicon layer and including a non-silicon waveguide, first and second mode transition region comprising tapers in the silicon waveguide and/or the non-silicon waveguide for exchanging light between the waveguide, and a plurality of regions disposed between the first and second mode transition regions comprising different cross-sectional areas of the silicon waveguide and the non-silicon waveguide such that confinement factors for the non-silicon waveguide in each of the plurality of regions differ.

Claims

1. An optical amplifier, comprising:

a silicon layer forming a silicon waveguide; and

a gain waveguide positioned on the silicon layer, the gain waveguide comprising;

an input end configured to receive light from the silicon waveguide;

a gain region configured to amplify the light to produce amplified light;

an output end configured to deliver the amplified light to the silicon waveguide;

a first confinement region positioned proximate the input end and configured to provide a first confinement factor; and

a second confinement region positioned proximate the output end and configured to provide a second confinement factor, the first confinement factor being greater than the second confinement factor.

2. The optical amplifier of claim 1, wherein:

the first confinement factor is defined by a width of a ridge of III-V semiconductor material in the first confinement region and a cross-sectional area of the gain waveguide in the first confinement region; and

the second confinement factor is defined by a width of the ridge of III-V semiconductor material in the second confinement region and a cross-sectional area of the gain waveguide in the second confinement region.

3. The optical amplifier of claim 1, wherein the input end of the gain waveguide tapers with a decreasing cross-sectional size away from the gain region.

4. The optical amplifier of claim 1, wherein the output end of the gain waveguide tapers with a decreasing cross-sectional size away from the gain region.

5. The optical amplifier of claim 1, further comprising at least one electrical contact configured to apply current to the gain region to vary an optical gain of the gain region.

6. The optical amplifier of claim 2, wherein the width of the ridge of III-V semiconductor material in the gain region increases from the first confinement region to the second confinement region, the width extending cross-sectionally across the gain region in a plane parallel to the silicon layer.

7. The optical amplifier of claim 2, wherein the cross-sectional area of the gain waveguide increases from the first confinement region to the second confinement region.

8. The optical amplifier of claim 3, wherein proximate the input end of the gain waveguide, the silicon waveguide tapers with a decreasing cross-sectional size toward the gain region.

9. The optical amplifier of claim 4, wherein proximate the output end of the gain waveguide, the silicon waveguide tapers with a decreasing cross-sectional size toward the gain region.

10. The optical amplifier of claim 5, wherein the at least one electrical contact comprises a single electrical contact configured to apply the current through the gain region in the gain waveguide.

11. The optical amplifier of claim 5, wherein the at least one electrical contact comprises a plurality of discrete electrical contacts configured to apply the current through the gain region in the gain waveguide, the plurality of discrete electrical contacts being spaced apart along a path parallel to the gain waveguide.

12. The optical amplifier of claim 7, wherein the cross-sectional area of the gain waveguide increases in discrete increments from the first confinement region to the second confinement region.

13. The optical amplifier of claim 7, wherein the cross-sectional area of the gain waveguide increases continuously from the first confinement region to the second confinement region.

14. The optical amplifier of claim 11, further comprising at least one electrical isolation region positioned to electrically isolate the plurality of discrete electrical contacts from one another.

15. A method for amplifying light, the method comprising:

directing first light in a silicon waveguide;

coupling the first light from the silicon waveguide to a gain region of a gain waveguide via a first transition region;

amplifying the first light in the gain region to form second light;

coupling the second light from the gain region to the silicon waveguide via a second transition region; and

applying current to the gain region to vary an optical gain of the gain region;

wherein;

the gain waveguide has a confinement factor at each location along a length of the gain waveguide,

the confinement factor is defined by a width of a ridge of III-V semiconductor material in the gain region and a cross-sectional area of the gain waveguide, and

the confinement factor decreases from the first transition region to the second transition region.

16. The method of claim 15, wherein:

the first transition region tapers towards the gain region, and

the second transition region tapers towards the gain region.

17. An optical amplifier, comprising:

a silicon layer forming a silicon waveguide;

a gain waveguide positioned on the silicon layer, the gain waveguide comprising;

an input end configured to receive light from the silicon waveguide;

a gain region configured to amplify the light to produce amplified light; and

an output end configured to deliver the amplified light to the silicon waveguide,

the input end of the gain waveguide and the output end of the gain waveguide each tapering with a decreasing cross-sectional size away from the gain region.

18. The optical amplifier of claim 17, wherein:

the gain waveguide has a confinement factor at each location along a length of the gain waveguide,

the confinement factor is defined by a width of a ridge of III-V semiconductor material in the gain region and a cross-sectional area of the gain waveguide, and

the confinement factor decreases from the input end to the output end.

19. The optical amplifier of claim 18, wherein the width of the ridge of III-V semiconductor material in the gain region increases from the input end to the output end, the width extending cross-sectionally across the gain region in a plane parallel to the silicon layer.

20. The optical amplifier of claim 18, wherein the cross-sectional area of the gain waveguide increases from the input end to the output end.