Liquid crystal display device including transistor which includes oxide semiconductor

  • US 10,095,071 B2
  • Filed: 05/16/2016
  • Issued: 10/09/2018
  • Est. Priority Date: 12/03/2008
  • Status: Active Grant
First Claim
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1. A liquid crystal display device comprising:

  • a transistor over a substrate, the transistor comprising;

    a gate electrode comprising a copper layer;

    a first oxide semiconductor layer over the gate electrode, the first oxide semiconductor layer comprising indium, gallium, and zinc;

    a second oxide semiconductor layer over the first oxide semiconductor layer; and

    a source electrode layer and a drain electrode layer electrically connected to the first oxide semiconductor layer;

    a first insulating film over the transistor, the first insulating film comprising a first opening;

    a resin layer over the transistor, the resin layer comprising a second opening;

    a first electrode layer over the resin layer, the first electrode layer being directly in contact with one of the source electrode layer and the drain electrode layer through the first opening and the second opening, and the first electrode layer not comprising a slit;

    a second insulating film over the first electrode layer;

    a second electrode layer over the second insulating film, the second electrode layer comprising a slit; and

    a liquid crystal layer,wherein the first oxide semiconductor layer comprises a depressed portion between the source electrode layer and the drain electrode layer,wherein one of the first electrode layer and the second electrode layer is a pixel electrode layer which is electrically connected to the transistor, and the other of the first electrode layer and the second electrode layer is a common electrode layer, andwherein the liquid crystal display device is configured to display an image by a lateral electric field mode.

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