Thin film transistor, method for manufacturing the same, and semiconductor device

  • US 10,096,623 B2
  • Filed: 12/28/2017
  • Issued: 10/09/2018
  • Est. Priority Date: 02/20/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode;

    a gate insulating layer over the gate electrode;

    an oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer overlapping with the gate electrode;

    a source electrode over the oxide semiconductor layer;

    a drain electrode over the oxide semiconductor layer;

    a first layer between the oxide semiconductor layer and the source electrode;

    a second layer between the oxide semiconductor layer and the drain electrode; and

    a third layer over a channel formation region of the oxide semiconductor layer,wherein each of the first layer, the second layer, and the third layer is configured to be a buffer layer,wherein each of the first layer, the second layer, and the third layer is in contact with the oxide semiconductor layer,wherein the third layer comprises a material which is different from a material of the first layer and a material of the second layer, andwherein the buffer layer comprises titanium.

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