Height measurement device and charged particle beam device

• US 10,101,150 B2
• Filed: 12/10/2014
• Issued: 10/16/2018
• Est. Priority Date: 12/10/2014
• Status: Active Grant

• Current Assignee: Hitachi High-Tech Company Limited (Hitachi, Ltd.)
• Original Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Inventors: Kawada, Hiroki, Fukuda, Muneyuki, Momonoi, Yoshinori, Takami, Shou
• Primary Examiner(s): Maskell, Michael
• Application Number:
  US15/533,489
• Publication Number:
  US 20170343340A1
• Time in Patent Office: 1,406 Days
• Field of Search: 250306, 250307, 250310, 250311
• CPC Class Codes: G01B 15/00 Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons characterised by the use of optical techniques G01B9/00, G01B11/00
• CPC Class Codes: G01B 15/02 for measuring thickness
• CPC Class Codes: G01B 2210/56 Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth
• CPC Class Codes: H01J 2237/2814 Measurement of surface topography
• CPC Class Codes: H01J 2237/31749 Focused ion beam
• CPC Class Codes: H01J 37/28 with scanning beams H01J37/268, H01J37/292, H01J37/2955 take precedence
• CPC Class Codes: H01J 37/317 for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation H01J37/36 takes precedence

Abstract

The objective of the present invention is to provide a height measurement device capable of highly accurate measurement in the depth direction of a structure on a sample. To achieve this objective, proposed are a charged particle beam device and a height measurement device that is provided with a calculation device for determining the size of a structure on a sample on the basis of a detection signal obtained by irradiating the sample with a charged particle beam, wherein the calculation device calculates the distance from a first charged particle beam irradiation mark formed at a first height on the sample and a second charged particle beam irradiation mark formed at a second height on the sample and on the basis of this distance and the charged particle beam irradiation angle when the first charged particle beam irradiation mark and second charged particle beam irradiation mark were formed, calculates the distance between the first height and the second height.

Claims

1. A height measurement device comprising:

a controller programmed to calculate a dimension of a structure on a sample based on a detection signal acquired by irradiating the sample with a charged particle beam,

wherein the controller

calculates a first dimension between a first irradiation mark of the charged particle beam formed in a first height of the sample and a second irradiation mark of the charged particle beam formed in a second height of the sample, and a second dimension between a third irradiation mark of the charged particle beam formed in the first height of the sample and a fourth irradiation mark of the charged particle beam formed in a third height of the sample,

calculates a dimension between the first height and the second height in a direction of the first height based on the first dimension and irradiation angles using the charged particle beam when the first irradiation mark and the second irradiation mark are formed,

calculates a dimension between the first height and the third height in a direction of the second height based on the second dimension and irradiation angles using the charged particle beam when the third irradiation mark and the fourth irradiation mark are formed, and

calculates an average value of the dimension in the direction of the first height and the dimension in the direction of the second height.

2. The height measurement device according to claim 1,

wherein the irradiation mark of the first charged particle beam and the irradiation mark of the second charged particle beam are formed by irradiating the sample with charged particle beams inclined at an angle of a with respect to a vertical direction of the sample surface.

3. The height measurement device according to claim 2,

wherein the controller calculates dimensions d of the first height and the second height based on a dimension s between the irradiation mark of the first charged particle beam and the irradiation mark of the second charged particle beam and d=s/tan(α

).

4. The height measurement device according to claim 1,

wherein the controller calculates dimensions between first heights and second heights of a plurality of portions in the sample based on calculation of a plurality of dimensions between irradiation marks of a plurality of first charged particle beams and irradiation marks of a plurality of second charged particle beams which are formed in the sample.

5. The height measurement device according to claim 1,

wherein the controller calculates the irradiation angles of the charged particle beams when the irradiation mark of the first charged particle beam and the irradiation mark of the second charged particle beam are formed based on the detection signal.

6. The height measurement device according to claim 5,

wherein the controller performs calculation using the following calculation expression based on the detection signal:

θ

=arcsin(D/B), where

θ

=incident angle of the charged particle beam,

D=size of drawing pattern formed in the sample, and

B=size of irradiation range using the charged particle beam.

7. The height measurement device according to claim 1,

wherein the controller calculates dimensions d of the first height and the second height based on a dimension s between the irradiation mark of the first charged particle beam and the irradiation mark of the second charged particle beam, an angle γ

of the inclined surface, and d=s×

tan γ

.

8. A height measurement device comprising:

a controller programmed to calculate a dimension of a structure on a sample based on a detection signal acquired by irradiating the sample with a charged particle beam, wherein the controller

calculates a first dimension between a first irradiation mark of the charged particle beam formed in a first height of the sample and a second irradiation mark of the charged particle beam formed in a second height of the sample, and a second dimension between a third irradiation mark of the charged particle beam formed in the first height of the sample and a fourth irradiation mark of the charged particle beam formed in a third height of the sample,

calculates a dimension between the first height and the second height in a direction of the first height based on the first dimension and irradiation angles using the charged particle beam when the first irradiation mark and the second irradiation mark are formed,

calculates a dimension between the first height and the third height in a direction of the second height based on the second dimension and irradiation angles using the charged particle beam when the third irradiation mark and the fourth irradiation mark are formed,

calculates an average value of the dimension in the direction of the first height and the dimension in the direction of the second height, and

wherein the controller calculates a dimension s between a first portion on the sample and a second portion on the sample, and calculates a dimension between the first portion and the second portion based on the dimension s and the following expression;

d=s/tan(α

), where

d is a height difference between the first portion and the second portion, and

α

is a relative angle between a vertical line of a sample surface and a virtual straight line that connects the first portion and the second portion.

9. A charged particle beam device comprising:

a detector which detects charged particles acquired by irradiating a sample provided in a sample chamber with a charged particle beam emitted from a charged particle source, and a controller programmed to measure a dimension of a structure formed on the sample based on an output of the detector,

wherein the controller calculates a first dimension between a first irradiation mark of the charged particle beam formed in a first height of the sample and a second irradiation mark of the charged particle beam formed in a second height of the sample, and a second dimension between a third irradiation mark of the charged particle beam formed in the first height of the sample and a fourth irradiation mark of the charged particle beam formed in a third height of the sample, and calculates a dimension between the first height and the second height in a direction of the first height based on the first dimension, irradiation angles using the charged particle beam when the first irradiation mark and the second irradiation mark are formed, calculates a dimension between the first height and the third height in a direction of the second height based on the second dimension and irradiation angles using the charged particle beam when the third irradiation mark and the fourth irradiation mark are formed, and calculates an average value of the dimension in the direction of the first height and the dimension in the direction of the second height.

10. The charged particle beam device according to claim 9,

wherein ion beam columns that form the irradiation mark of the first charged particle beam and the irradiation mark of the second charged particle beam are provided in the sample chamber.

11. A height measurement method of measuring a dimension of a structure on a sample in a height direction, the method comprising:

irradiating the sample with an ion beam to form an inclined surface that is inclined with respect to a surface of the sample;

irradiating the sample and the inclined surface with ion beams while inclining the ion beam at an angle of a with respect to a vertical direction of the surface of the sample so as to allow the ion beam to irradiate the surface of the sample and the inclined surface at different positions as seen from the vertical direction, so that a first irradiation mark and a second irradiation mark are formed on the surface of the sample and the inclined surface, respectively;

scanning the sample with a charged particle beam in the vertical direction after the first irradiation mark and the second irradiation mark are formed,

measuring a dimension s between the first irradiation mark and the second irradiation mark based on a detection signal acquired through the scanning, and

calculating a dimension between the first irradiation mark and the second irradiation mark in the height direction based on the dimension s and the angle α

.