Formation of advanced interconnects including set of metal conductor structures in patterned dielectric layer
First Claim
1. A method for fabricating an advanced metal conductor structure comprising:
- providing a pattern in a dielectric layer, wherein the pattern includes a set of features in the dielectric layer for a set of metal conductor structures, the set of features having a first dimension;
creating an adhesion promoting layer disposed over the patterned dielectric layer;
depositing a ruthenium layer disposed on the adhesion promoting layer;
depositing a cobalt layer over the ruthenium layer;
performing a high temperature thermal anneal which creates a ruthenium cobalt alloy layer to cover surfaces of the set of features;
wherein a portion of the cobalt layer is unreacted with the ruthenium layer after the high temperature thermal anneal producing unreacted cobalt;
etching the unreacted cobalt from the ruthenium cobalt alloy layer; and
depositing a metal layer disposed on the ruthenium cobalt alloy layer to form the set of metal conductor structures.
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Accused Products
Abstract
A pattern is provided in a dielectric layer. The pattern includes a set of features in the dielectric for a set of metal conductor structures. The set of features have a first dimension. An adhesion promoting layer disposed over the patterned dielectric is deposited. A ruthenium layer disposed over the adhesion promoting layer is deposited. A cobalt layer is deposited over the ruthenium layer. A high temperature thermal anneal is performed which creates a ruthenium cobalt alloy layer to cover surfaces of the set of features. A metal layer is deposited disposed over the ruthenium cobalt alloy layer to form a set of metal conductor structures. In another aspect of the invention, a device is created using the method.
60 Citations
15 Claims
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1. A method for fabricating an advanced metal conductor structure comprising:
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providing a pattern in a dielectric layer, wherein the pattern includes a set of features in the dielectric layer for a set of metal conductor structures, the set of features having a first dimension; creating an adhesion promoting layer disposed over the patterned dielectric layer; depositing a ruthenium layer disposed on the adhesion promoting layer; depositing a cobalt layer over the ruthenium layer; performing a high temperature thermal anneal which creates a ruthenium cobalt alloy layer to cover surfaces of the set of features;
wherein a portion of the cobalt layer is unreacted with the ruthenium layer after the high temperature thermal anneal producing unreacted cobalt;etching the unreacted cobalt from the ruthenium cobalt alloy layer; and depositing a metal layer disposed on the ruthenium cobalt alloy layer to form the set of metal conductor structures. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification