Preparation method for thin film transistor, preparation method for array substrate, array substrate, and display apparatus
First Claim
1. A method for manufacturing a thin-film transistor (TFT), comprising:
- forming a pattern of a semiconductor layer on a base substrate;
forming an interlayer dielectric layer on the pattern of the semiconductor layer;
forming a first photoresist pattern on the interlayer dielectric layer, the first photoresist pattern including first-thickness photoresist and second-thickness photoresist;
the first-thickness photoresist corresponding to an area, at which a channel region is to be formed, in the pattern of the semiconductor layer;
the second-thickness photoresist corresponding to areas, at which a source lightly doped region and a drain lightly doped region are to be formed, in the pattern of the semiconductor layer;
the first-thickness photoresist has a thickness greater than that of the second-thickness photoresist;
performing heavily doped ion implantation on the pattern of the semiconductor layer by taking the first photoresist pattern as a barrier mask, and forming patterns of a source heavily doped region and a drain heavily doped region;
performing ashing treatment on the first photoresist pattern, so as to remove the second-thickness photoresist and reduce the thickness of the first-thickness photoresist, and form a second photoresist pattern;
performing lightly doped ion implantation on the pattern of the semiconductor layer by taking the second photoresist pattern as a barrier mask, and forming patterns of the channel region, the source lightly doped region and the drain lightly doped region; and
removing the second photoresist pattern.
9 Assignments
0 Petitions
Accused Products
Abstract
Preparation method for a thin film transistor, preparation method for an array substrate, an array substrate, and a display apparatus are provided. The preparation method for a thin film transistor includes: forming, on a pattern of a semiconductor layer, a first photoresist pattern including a photoresist with two different thicknesses, and performing a heavily-doped ion implantation process on the pattern of the semiconductor layer by using the first photoresist pattern as a barrier mask; ashing the first photoresist pattern to remove the photoresist with a second thickness and to thin the photoresist with a first thickness, so as to form a second photoresist pattern; and performing a lightly-doped ion implantation process on the pattern of the semiconductor layer by using the second photoresist pattern as a barrier mask.
13 Citations
15 Claims
-
1. A method for manufacturing a thin-film transistor (TFT), comprising:
-
forming a pattern of a semiconductor layer on a base substrate; forming an interlayer dielectric layer on the pattern of the semiconductor layer; forming a first photoresist pattern on the interlayer dielectric layer, the first photoresist pattern including first-thickness photoresist and second-thickness photoresist;
the first-thickness photoresist corresponding to an area, at which a channel region is to be formed, in the pattern of the semiconductor layer;
the second-thickness photoresist corresponding to areas, at which a source lightly doped region and a drain lightly doped region are to be formed, in the pattern of the semiconductor layer;
the first-thickness photoresist has a thickness greater than that of the second-thickness photoresist;performing heavily doped ion implantation on the pattern of the semiconductor layer by taking the first photoresist pattern as a barrier mask, and forming patterns of a source heavily doped region and a drain heavily doped region; performing ashing treatment on the first photoresist pattern, so as to remove the second-thickness photoresist and reduce the thickness of the first-thickness photoresist, and form a second photoresist pattern; performing lightly doped ion implantation on the pattern of the semiconductor layer by taking the second photoresist pattern as a barrier mask, and forming patterns of the channel region, the source lightly doped region and the drain lightly doped region; and removing the second photoresist pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
-
Specification