Preparation method for thin film transistor, preparation method for array substrate, array substrate, and display apparatus

  • US 10,120,256 B2
  • Filed: 12/31/2015
  • Issued: 11/06/2018
  • Est. Priority Date: 08/14/2015
  • Status: Active Grant
First Claim
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1. A method for manufacturing a thin-film transistor (TFT), comprising:

  • forming a pattern of a semiconductor layer on a base substrate;

    forming an interlayer dielectric layer on the pattern of the semiconductor layer;

    forming a first photoresist pattern on the interlayer dielectric layer, the first photoresist pattern including first-thickness photoresist and second-thickness photoresist;

    the first-thickness photoresist corresponding to an area, at which a channel region is to be formed, in the pattern of the semiconductor layer;

    the second-thickness photoresist corresponding to areas, at which a source lightly doped region and a drain lightly doped region are to be formed, in the pattern of the semiconductor layer;

    the first-thickness photoresist has a thickness greater than that of the second-thickness photoresist;

    performing heavily doped ion implantation on the pattern of the semiconductor layer by taking the first photoresist pattern as a barrier mask, and forming patterns of a source heavily doped region and a drain heavily doped region;

    performing ashing treatment on the first photoresist pattern, so as to remove the second-thickness photoresist and reduce the thickness of the first-thickness photoresist, and form a second photoresist pattern;

    performing lightly doped ion implantation on the pattern of the semiconductor layer by taking the second photoresist pattern as a barrier mask, and forming patterns of the channel region, the source lightly doped region and the drain lightly doped region; and

    removing the second photoresist pattern.

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