Structure and process to tuck fin tips self-aligned to gates
First Claim
Patent Images
1. A method of forming a semiconductor structure, the method comprising:
- forming a gate structure straddling a semiconductor fin;
forming a dielectric material over the semiconductor fin and on sidewall surfaces of the gate structure;
forming a patterned material stack over the dielectric material, the patterned material stack having an opening that exposes one side of the gate structure;
cutting the semiconductor fin utilizing the patterned material stack and a portion of the dielectric material within the opening as an etch mask to provide a semiconductor fin portion containing the gate structure and having an exposed end wall; and
forming outer gate spacers, wherein one of the outer gate spacers contains a lower sidewall portion that directly contacts the entirety of the exposed end wall of the semiconductor fin portion.
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Abstract
A semiconductor structure is provided that includes a semiconductor fin portion having an end wall and extending upward from a substrate. A gate structure straddles a portion of the semiconductor fin portion. A first set of gate spacers is located on opposing sidewall surfaces of the gate structure; and a second set of gate spacers is located on sidewalls of the first set of gate spacers. One gate spacer of the second set of gate spacers has a lower portion that directly contacts the end wall of the semiconductor fin portion.
14 Citations
15 Claims
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1. A method of forming a semiconductor structure, the method comprising:
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forming a gate structure straddling a semiconductor fin; forming a dielectric material over the semiconductor fin and on sidewall surfaces of the gate structure; forming a patterned material stack over the dielectric material, the patterned material stack having an opening that exposes one side of the gate structure; cutting the semiconductor fin utilizing the patterned material stack and a portion of the dielectric material within the opening as an etch mask to provide a semiconductor fin portion containing the gate structure and having an exposed end wall; and forming outer gate spacers, wherein one of the outer gate spacers contains a lower sidewall portion that directly contacts the entirety of the exposed end wall of the semiconductor fin portion. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of forming a semiconductor structure, the method comprising:
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forming a gate structure straddling a semiconductor fin; forming a dielectric material over the semiconductor fin and on sidewall surfaces of the gate structure; forming a patterned material stack over the dielectric material, the patterned material stack having an opening that exposes one side of the gate structure; cutting the semiconductor fin utilizing the patterned material stack and a portion of the dielectric material within the opening as an etch mask to provide a semiconductor fin portion containing the gate structure and having an exposed end wall, wherein during the cutting the dielectric material is etched to provide inner spacers, wherein one of the inner spacer in the opening has an outer edge that is vertically aligned to the end wall of the semiconductor fin portion; and forming outer gate spacers, wherein one of the outer gate spacers contains a lower sidewall portion that directly contacts the entirety of the exposed end wall of the semiconductor fin portion.
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Specification