OLED display, display device and manufacturing method thereof

• US 10,134,823 B2
• Filed: 10/30/2015
• Issued: 11/20/2018
• Est. Priority Date: 06/11/2015
• Status: Active Grant

• Current Assignee: Beijing BOE Optoelectronics Technology Co Ltd. (BOE Technology Group Co., Ltd.), BOE Technology Group Co., Ltd.
• Original Assignee: Beijing BOE Optoelectronics Technology Co Ltd. (BOE Technology Group Co., Ltd.), BOE Technology Group Co., Ltd.
• Inventors: Yang, Shengji, Dong, Xue, Wang, Haisheng, Liu, Peng, Xue, Hailin, Zhao, Yiming, Xuan, Minghua
• Primary Examiner(s): Menz, Douglas
• Application Number:
  US15/122,338
• Publication Number:
  US 20170162643A1
• Time in Patent Office: 1,117 Days
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors
• CPC Class Codes: H10K 59/32 Stacked devices having two or more layers, each emitting at different wavelengths
• CPC Class Codes: H10K 59/35 comprising red-green-blue [RGB] subpixels

Abstract

An organic light emitting diode (OLED) display, a display device and a manufacturing method thereof are provided. The OLED display includes a base substrate; and OLED pixel units arranged on the base substrate in a matrix. Each OLED pixel unit includes at least one OLED structure, and the OLED structure includes a cathode layer, an anode layer and an organic light emitting layer located therebetween, and the OLED pixel unit further includes a pixel circuit that is connected correspondingly with the OLED structure and configured to drive it to illuminate light. The pixel circuit includes a switching unit and a capacitor located above or below the layer in which the switching unit is located.

Claims

1. An organic light-emitting diode (OLED) display, including:

a base substrate, and

OLED pixel units arranged on the base substrate in a matrix, each OLED pixel unit comprising at least one OLED structure and the OLED structure comprising;

a cathode layer,

an anode layer, and

an organic light emitting layer located between the cathode layer and the anode layer, wherein

the OLED pixel unit further comprises a pixel circuit that is connected correspondingly with the OLED structure and configured to drive the OLED structure, and the pixel circuit comprises a switching unit and a capacitor, and the capacitor is located above or below the layer in which the switching unit is located;

wherein the capacitor is located above the layer in which the switching unit is located, the OLED structure is located above the switching unit, the capacitor is formed by the cathode layer of the OLED structure and a conducting layer, and the conducting layer is located between the cathode layer and the layer in which the switching unit is located;

wherein the switching unit is a thin film transistor comprising a gate layer, an active layer, and a source/drain metal layer above the active layer, and the conducting layer is the source/drain metal layer.

2. The OLED display of claim 1, wherein the OLED pixel unit comprises three OLED structures disposed therein, which are stacked one on top of another and insulated from each other and emit red, blue and green light respectively.

3. The OLED display of claim 1, wherein the OLED pixel unit comprises three OLED structures disposed therein, which are disposed side by side, the conducting layer has three conducting layer sub-areas corresponding to the three OLED structures, and each of the conducting layer separately sub-areas forms a capacitor together with the cathode at the topmost layer of the each of the three OLED structures.

4. The OLED display of claim 1, wherein the capacitor is located above the layer in which the switching unit is located, and a part of each the pixel circuit that is below the capacitor only comprises two switching units, and the two switching units comprise a driving thin film transistor (TFT) and a switching TFT.

5. The OLED display of claim 2, wherein the three OLED structures are connected to three pixel circuits respectively or connected to a same and single pixel circuit.

6. A display device comprising the OLED display of claim 1.

7. A manufacturing method for the OLED display of claim 1, comprising:

providing a pixel circuit, including a switching unit and a capacitor, in an OLED pixel unit, wherein the pixel circuit is connected correspondingly with an OLED structure and configured to drive the OLED structure, and the capacitor is provided above or below a layer in which the switching unit is located;

wherein the capacitor is located above the layer in which the switching unit is located, the OLED structure is located above the switching unit, the capacitor is formed by the cathode layer of the OLED structure and a conducting layer, and the conducting layer is located between the cathode layer and the layer in which the switching unit is located;

wherein the switching unit is a thin film transistor including a gate layer, an active layer, and a source/drain metal layer above the active layer, and the conducting layer is formed synchronously with the source/drain layer.

8. The OLED display of claim 3, wherein the three OLED structures are connected to three pixel circuits respectively or connected to a same and single pixel circuit.

9. The OLED display of claim 2, wherein the capacitor is located above the layer in which the switching unit is located, and a part of each the pixel circuit that is below the capacitor only comprises two switching units, and the two switching units comprise a driving thin film transistor (TFT) and a switching TFT.

10. The OLED display of claim 3, wherein the capacitor is located above the layer in which the switching unit is located, and a part of each the pixel circuit that is below the capacitor only comprises two switching units, and the two switching units comprise a driving thin film transistor (TFT) and a switching TFT.