Switching system and method
First Claim
Patent Images
1. A Radio Frequency (RF) device comprising:
- a RF switch comprising a plurality of transistor switching elements implemented on Silicon on Insulator (SOI);
a voltage generator including a charge pump configured to provide an output voltage;
a level shifter configured to receive the output voltage from the charge pump and perform level shifting;
an oscillator configured to provide a clock signal to the charge pump;
a filter coupled between the level shifter and the RF switch;
wherein the filter is configured to block unwanted signals between the RF switch and the level shifter;
a digital control block configured to control the on-off state of the transistor elements;
wherein the filter is between the digital control block and a gate of each of the transistor switching elements; and
wherein each filter is configured to block unwanted high power RF voltage signals from the RF switch from reaching the digital control block and to reduce non-linearities in the RF switch.
0 Assignments
0 Petitions
Accused Products
Abstract
The invention relates to a Radio Frequency System and method. A Radio Frequency (RF) system comprising a RF switch comprising a plurality of transistor switching elements implemented on Silicon on Insulator (SOI) for switching at least one or more RF signals and said SOI comprises a bulk substrate region and a buried oxide region. At least one filter is adapted to isolate the RF signal from the substrate and/or other high frequency signals or control signals present in the RF system. There is also provided a coupling capacitor adapted to cooperate with the filter to improve linearity of the transistor switch elements.
6 Citations
21 Claims
-
1. A Radio Frequency (RF) device comprising:
-
a RF switch comprising a plurality of transistor switching elements implemented on Silicon on Insulator (SOI); a voltage generator including a charge pump configured to provide an output voltage; a level shifter configured to receive the output voltage from the charge pump and perform level shifting; an oscillator configured to provide a clock signal to the charge pump; a filter coupled between the level shifter and the RF switch;
wherein the filter is configured to block unwanted signals between the RF switch and the level shifter;a digital control block configured to control the on-off state of the transistor elements; wherein the filter is between the digital control block and a gate of each of the transistor switching elements; and wherein each filter is configured to block unwanted high power RF voltage signals from the RF switch from reaching the digital control block and to reduce non-linearities in the RF switch. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
-
Specification