Contact configuration for optoelectronic device

  • US 10,147,848 B2
  • Filed: 10/03/2016
  • Issued: 12/04/2018
  • Est. Priority Date: 10/01/2015
  • Status: Active Grant
First Claim
Patent Images

1. An optoelectronic device comprising:

  • an n-type semiconductor layer having a surface;

    a mesa located over a first portion of the surface of the n-type semiconductor layer and having a mesa boundary;

    an n-type contact region located over a second portion of the surface of the n-type semiconductor layer entirely distinct from the first portion, wherein the n-type contact region is at least partially defined by the mesa boundary;

    a first n-type metallic contact layer located over at least a portion of the n-type contact region in proximity of the mesa boundary, wherein the first n-type metallic contact layer forms an ohmic contact with the n-type semiconductor layer; and

    a second n-type metallic contact layer located over a second portion of the n-type contact region, wherein the second n-type metallic contact layer is formed of a reflective metallic material distinct from a metallic material used to form the first n-type metallic contact layer.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×