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Creating arbitrary patterns on a 2-D uniform grid VCSEL array

  • US 10,153,614 B1
  • Filed: 12/18/2017
  • Issued: 12/11/2018
  • Est. Priority Date: 08/31/2017
  • Status: Active Grant
First Claim
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1. An optoelectronic device, comprising:

  • a semiconductor substrate; and

    an array of optoelectronic cells, which are formed on the semiconductor substrate and comprise;

    first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack;

    second epitaxial layers formed over the lower DBR stack, defining a quantum well structure;

    third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and

    electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell,wherein the array comprises a first set of the optoelectronic cells that are configured to emit laser radiation in response to the excitation current and a second set of the optoelectronic cells, interleaved with the first set, in which at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation,wherein the second set of the optoelectronic cells comprise implanted ions in the upper DBR stack, which increase an electrical resistance of the upper DBR stack by an amount sufficient to reduce the excitation current injected into the quantum well structure to below a threshold required for emitting laser radiation.

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