Creating arbitrary patterns on a 2-D uniform grid VCSEL array
First Claim
1. An optoelectronic device, comprising:
- a semiconductor substrate; and
an array of optoelectronic cells, which are formed on the semiconductor substrate and comprise;
first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack;
second epitaxial layers formed over the lower DBR stack, defining a quantum well structure;
third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and
electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell,wherein the array comprises a first set of the optoelectronic cells that are configured to emit laser radiation in response to the excitation current and a second set of the optoelectronic cells, interleaved with the first set, in which at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation,wherein the second set of the optoelectronic cells comprise implanted ions in the upper DBR stack, which increase an electrical resistance of the upper DBR stack by an amount sufficient to reduce the excitation current injected into the quantum well structure to below a threshold required for emitting laser radiation.
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Abstract
An optoelectronic device includes a semiconductor substrate and an array of optoelectronic cells, formed on the semiconductor substrate. The cells include first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell. A first set of the optoelectronic cells are configured to emit laser radiation in response to the excitation current. In a second set of the optoelectronic cells, interleaved with the first set, at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation.
81 Citations
12 Claims
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1. An optoelectronic device, comprising:
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a semiconductor substrate; and an array of optoelectronic cells, which are formed on the semiconductor substrate and comprise; first epitaxial layers defining a lower distributed Bragg-reflector (DBR) stack; second epitaxial layers formed over the lower DBR stack, defining a quantum well structure; third epitaxial layers, formed over the quantum well structure, defining an upper DBR stack; and electrodes formed over the upper DBR stack, which are configurable to inject an excitation current into the quantum well structure of each optoelectronic cell, wherein the array comprises a first set of the optoelectronic cells that are configured to emit laser radiation in response to the excitation current and a second set of the optoelectronic cells, interleaved with the first set, in which at least one element of the optoelectronic cells, selected from among the epitaxial layers and the electrodes, is configured so that the optoelectronic cells in the second set do not emit the laser radiation, wherein the second set of the optoelectronic cells comprise implanted ions in the upper DBR stack, which increase an electrical resistance of the upper DBR stack by an amount sufficient to reduce the excitation current injected into the quantum well structure to below a threshold required for emitting laser radiation. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for manufacturing an optoelectronic device, the method comprising:
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depositing first epitaxial layers on a semiconductor substrate to define a lower distributed Bragg-reflector (DBR) stack; depositing second epitaxial layers over the first epitaxial layers to define a quantum well structure; depositing third epitaxial layers over the second epitaxial layers to define an upper DBR stack; etching the epitaxial layers to define an array of optoelectronic cells; depositing over the third epitaxial layers electrodes configurable to inject an excitation current into the quantum well structure of each optoelectronic cell so as to cause a first set of the optoelectronic cells to emit laser radiation in response to the excitation current; and configuring at least one element, selected from among the epitaxial layers and the electrodes, of a second set the optoelectronic cells, which is interleaved with the first set, so that the optoelectronic cells in the second set do not emit the laser radiation, wherein configuring the at least one element comprises implanting ions in the upper DBR stack, which increase the electrical resistance of the upper DBR stack by an amount sufficient to reduce the excitation current injected into the quantum well structure to below a threshold required for emitting laser radiation. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification