Radio frequency switch having field effect transistor cells

• US 10,181,478 B2
• Filed: 04/24/2017
• Issued: 01/15/2019
• Est. Priority Date: 01/06/2017
• Status: Active Grant

• Current Assignee: Qorvo US, Inc. (Qorvo, Inc.)
• Original Assignee: Qorvo US, Inc. (Qorvo, Inc.)
• Inventors: Scott, Baker, Maxim, George, Leipold, Dirk Robert Walter
• Primary Examiner(s): Chen, David
• Application Number:
  US15/494,605
• Publication Number:
  US 20180197881A1
• Time in Patent Office: 631 Days
• Field of Search: 257E29281, 257E29344
• CPC Class Codes: H01L 23/482 consisting of lead-in layers inseparably applied to the semiconductor body electrodes H01L29/40
• CPC Class Codes: H01L 23/4824 Pads with extended contours, e.g. grid structure, branch structure, finger structure
• CPC Class Codes: H01L 23/5222 Capacitive arrangements or effects of, or between wiring layers other capacitive arrangements H01L23/642
• CPC Class Codes: H01L 27/0207 Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/1203 the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/41725 Source or drain electrodes for field effect devices with monocrystalline semiconductor on source/drain region H01L29/0843
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 29/78615 with a body contact
• CPC Class Codes: H01L 29/93 Variable capacitance diodes, e.g. varactors
• CPC Class Codes: H03K 17/162 without feedback from the output circuit to the control circuit
• CPC Class Codes: H03K 17/687 the devices being field-effect transistors

Abstract

An electronic component made up of field-effect transistor (FET) cells is disclosed. Each FET cell includes a finger region having drain, gate, and source fingers disposed over a semiconductor substrate. An isolation region extends across a first end of the finger region. An off-state linearization region abuts the first end of the isolation region. A doped well is disposed within the off-state linearization region over the semiconductor substrate. A dielectric layer is disposed over the doped region. A first conductive stripe is disposed over the dielectric layer in longitudinal alignment with the drain finger. A second conductive stripe is disposed over the dielectric layer in longitudinal alignment with the drain finger. A drain finger electrode is aligned over and coupled to both the drain finger and the first conductive stripe. A source finger electrode is aligned over and coupled to both the source finger and the second conductive stripe.

Claims

1. An electronic component comprising a plurality of field-effect transistor (FET) cells that form a first transistor over a semiconductor substrate, wherein each FET cell of the plurality of FET cells comprises:

a finger region having a rectangular shape with a first end, a second end, and first sides comprising;

a drain finger disposed over the semiconductor substrate along a drain axis that is in parallel with the first sides;

a source finger spaced from the drain finger and disposed over the semiconductor substrate along a source axis that is in parallel with the first sides;

a gate finger disposed over the semiconductor substrate such that the gate finger is spaced between and in parallel with the drain finger and the source finger, wherein the finger region has a first non-linear off-state capacitance that increases as drain-to-source voltage increases within a first voltage range;

an isolation region that extends across the first end of the finger region;

an off-state linearization region having a rectangular shape with a third end that abuts the isolation region and a fourth end and second sides comprising;

a doped well that is disposed over the semiconductor substrate and extending between the second sides from the third end to the fourth end;

a dielectric layer disposed over the doped well;

a first conductive stripe disposed over the dielectric layer between the third end and the fourth end in longitudinal alignment with the drain axis;

a second conductive stripe disposed over the dielectric layer between the third end and the fourth end in longitudinal alignment with the source axis;

a drain finger electrode aligned over and coupled to both the drain finger and first conductive stripe; and

a source finger electrode aligned over and coupled to both the source finger and the second conductive stripe, wherein the off-state linearization region has a second non-linear off-state capacitance that decreases as the drain-to-source voltage increases within the first voltage range.

2. The electronic component of claim 1 wherein the first non-linear off-state capacitance and the second non-linear off-state capacitance add together to form a substantially linear total off-state capacitance.

3. The electronic component of claim 2 wherein the first voltage range is between 10 V and 100 V.

4. The electronic component of claim 3 wherein the total off-state capacitance that is a parallel combination of the first non-linear off-state capacitance and the second non-linear off-state capacitance departs from a fixed capacitance value by no more than ±

10%.

5. The electronic component of claim 2 wherein the first voltage range is between 30 V and 80 V.

6. The electronic component of claim 5 wherein the total off-state capacitance that is a parallel combination of the first non-linear off-state capacitance and the second non-linear off-state capacitance departs from a fixed capacitance value by no more than ±

5%.

7. The electronic component of claim 1 wherein a total off-state capacitance that is a parallel combination of the first non-linear off-state capacitance and the second non-linear off-state capacitance is within ±

1% of a fixed capacitance value for a radio frequency (RF) switch made up of the FET cells while an applied off-state voltage is within a second voltage range of 0 V to 30 V.

8. The electronic component of claim 1 further including a varactor control electrode coupled to the doped well and configured to receive a bias voltage provided by a varactor bias network.

9. The electronic component of claim 1 wherein the doped well has p+ doping.

10. The electronic component of claim 1 wherein the doped well has n+ doping.

11. The electronic component of claim 1 further including a body well disposed over the semiconductor substrate.

12. The electronic component of claim 11 wherein the body well has p+ doping.

13. The electronic component of claim 11 wherein the body well has n+ doping.

14. The electronic component of claim 11 further including a body electrode coupled to the body well.

15. The electronic component of claim 14 wherein the body electrode is configured to receive a body bias voltage from a body bias network.

16. The electronic component of claim 1 further including a buried oxide layer that separates the finger region from the semiconductor substrate.

17. The electronic component of claim 1 wherein the isolation region comprises a shallow trench isolation filled with a dielectric material.

18. The electronic component of claim 17 wherein the dielectric material is silicon dioxide (SiO₂).

19. An RF switch comprising the electronic component of claim 1, further including a plurality of transistors that are identical to the first transistor and include the first transistor wherein the transistors are coupled in series drain-to-source between an RF signal input terminal and an RF signal output terminal.

20. The RF switch of claim 19 is a silicon-on-insulator type.