Semiconductor device and method for manufacturing the same

• US 10,181,545 B2
• Filed: 12/05/2012
• Issued: 01/15/2019
• Est. Priority Date: 09/12/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Akimoto, Kengo, Komori, Shigeki, Uochi, Hideki
• Primary Examiner(s): Yasmeen, Nishath
• Application Number:
  US13/705,734
• Publication Number:
  US 20130092932A1
• Time in Patent Office: 2,232 Days
• Field of Search: 257 40
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0041 characterised by field-effect operation

Abstract

An object is to provide a semiconductor device including a thin film transistor with excellent electrical characteristics and high reliability and a method for manufacturing the semiconductor device with high mass productivity. A main point is to form a low-resistance oxide semiconductor layer as a source or drain region after forming a drain or source electrode layer over a gate insulating layer and to form an oxide semiconductor film thereover as a semiconductor layer. It is preferable that an oxygen-excess oxide semiconductor layer be used as a semiconductor layer and an oxygen-deficient oxide semiconductor layer be used as a source region and a drain region.

Claims

1. A display device comprising:

a terminal portion comprising;

a floating conductive layer;

a first insulating film over the floating conductive layer; and

a first conductive layer overlapping with the first insulating film and the floating conductive layer;

a transistor comprising;

the first insulating film;

an oxide semiconductor layer over the first insulating film; and

,

the first conductive layer electrically connected to the oxide semiconductor layer;

a second insulating film over the transistor and the terminal portion;

a second conductive layer over the second insulating film, the second conductive layer being electrically connected to the terminal portion; and

a flexible printed circuit electrically connected to the terminal portion,

wherein an edge portion of the first conductive layer overlaps with the floating conductive layer inside an edge portion of the floating conductive layer, and

wherein the second conductive layer is electrically connected to the first conductive layer through an opening of the second insulating film.

2. The display device according to claim 1, wherein the second conductive layer comprises a transparent conductive material.

3. The display device according to claim 1, wherein the oxide semiconductor layer comprises gallium, indium, and zinc.

4. The display device according to claim 1, wherein the flexible printed circuit is attached to the second conductive layer.

5. The display device according to claim 1, wherein the first conductive layer comprises any one of aluminum, chrome, tantalum, titanium, molybdenum, and tungsten.