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Semiconductor device

  • US 10,192,795 B2
  • Filed: 04/13/2016
  • Issued: 01/29/2019
  • Est. Priority Date: 06/11/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a power transistor that passes a current from a high-potential terminal to a low-potential terminal, the power transistor comprising a gate electrode insulated from a channel region of the power transistor by an insulating film; and

    a temperature sensing diode that senses a variation in temperature due to heating of the power transistor,wherein the low-potential terminal of the power transistor and a cathode of the temperature sensing diode are directly electrically connected to each other so as to have a same potential.

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