Abrasive, abrasive set, and method for abrading substrate

• US 10,196,542 B2
• Filed: 10/21/2015
• Issued: 02/05/2019
• Est. Priority Date: 02/21/2012
• Status: Active Grant

• Current Assignee: Resonac Corp. (Resonac Holdings Corp.)
• Original Assignee: Hitachi Chemical Company Limited (Resonac Holdings Corp.)
• Inventors: Minami, Hisataka, Akutsu, Toshiaki, Iwano, Tomohiro, Fujisaki, Koji
• Primary Examiner(s): Norton, Nadine G
• Assistant Examiner(s): Remavege, Christopher
• Application Number:
  US14/918,834
• Publication Number:
  US 20160040041A1
• Time in Patent Office: 1,203 Days
• Field of Search: 252 791- 795, 438692, 438693, 451 28, 51309, 216 88, 216 89
• CPC Class Codes: C09G 1/02 containing abrasives or grinding agents abrasives as such C09K3/14; polishing of semi-conductors H01L
• CPC Class Codes: C09K 3/1409 Abrasive particles per se preparation of diamond C01B32/25
• CPC Class Codes: C09K 3/1436 Composite particles, e.g. coated particles
• CPC Class Codes: C09K 3/1463 Aqueous liquid suspensions
• CPC Class Codes: H01L 21/30625 With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step
• CPC Class Codes: H01L 21/76224 using trench refilling with dielectric materials trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264

Abstract

The polishing agent of the invention comprises water, an abrasive grain containing a hydroxide of a tetravalent metal element, and a specific glycerin compound.

Claims

1. A polishing agent comprising:

water,

abrasive grains containing a hydroxide of tetravalent cerium, wherein the abrasive grains produce absorbance of 1.000 or greater for light with a wavelength of 290 nm in an aqueous dispersion having the abrasive grain content adjusted to 0.0065 mass %, and

at least one glycerin compound represented by general formula (I) below;

5. The polishing agent according to claim 1, further comprising at least one hydroxide of a tetravalent metal element selected from the group consisting of hydroxide of a rare earth metal element other than cerium and hydroxide of zirconium.

6. The polishing agent according to claim 1, wherein a mean particle diameter of the abrasive grains is 1 nm or greater and 300 nm or less.

7. The polishing agent according to claim 1, wherein a content of the abrasive grains is 0.005 mass % or greater and 20 mass % or less based on a total mass of the polishing agent.

8. The polishing agent according to claim 1, wherein a weight-average molecular weight of the at least one glycerin compound is 250 or greater and 10×

10³ or less.

9. The polishing agent according to claim 1, wherein a content of the at least one glycerin compound is 0.01 mass % or greater and 10 mass % or less based on a total mass of the polishing agent.

10. The polishing agent according to claim 1, wherein a pH is 3.0 or greater and 12.0 or less.

11. The polishing agent according to claim 1, used for polishing of a surface to be polished containing silicon oxide.

12. A polishing agent set comprising constituent components of the polishing agent according to claim 1 separately stored as a first liquid and a second liquid,

the first liquid containing the abrasive grains and water, and

the second liquid containing the at least one glycerin compound and water.

13. A polishing method for a base substrate, comprising a step of polishing a surface to be polished of a base substrate using the polishing agent according to claim 1.

14. A polishing method for a base substrate, comprising a step of polishing a surface to be polished of a base substrate using a polishing agent obtained by mixing the first liquid and the second liquid of the polishing agent set according to claim 12.

15. A polishing method for a base substrate having an insulating material and polysilicon,

the polishing method comprising a step of selectively polishing the insulating material with respect to the polysilicon using the polishing agent according to claim 1.

16. A polishing method for a base substrate having an insulating material and polysilicon,

the polishing method comprising a step of selectively polishing the insulating material with respect to the polysilicon using a polishing agent obtained by mixing the first liquid and the second liquid of the polishing agent set according to claim 12.

2. A polishing agent comprising:

water,

abrasive grains containing a hydroxide of tetravalent cerium, wherein the abrasive grains produce absorbance of 1.000 or greater for light with a wavelength of 290 nm in an aqueous dispersion having the abrasive grain content adjusted to 0.0065 mass %, and

at least one glycerin compound selected from the group consisting of polyglycerin, diglycerin derivatives and polyglycerin derivatives, and

HLB value of the at least one glycerin compound being 19.8 to 20.0.

3. The polishing agent according to claim 2, wherein the at least one glycerin compound is a polyoxyalkylene diglyceryl ether.

4. The polishing agent according to claim 2, wherein the at least one glycerin compound is a polyoxyalkylene polyglyceryl ether.

17. The polishing agent according to claim 2, further comprising at least one hydroxide of a tetravalent metal element selected from the group consisting of hydroxide of a rare earth metal element other than cerium and hydroxide of zirconium.

18. The polishing agent according to claim 2, wherein a mean particle diameter of the abrasive grains is 1 nm or greater and 300 nm or less.

19. The polishing agent according to claim 2, wherein a content of the abrasive grains is 0.005 mass % or greater and 20 mass % or less based on a total mass of the polishing agent.

20. The polishing agent according to claim 2, wherein a weight-average molecular weight of the at least one glycerin compound is 250 or greater and 10×

10³ or less.

21. The polishing agent according to claim 2, wherein a content of the at least one glycerin compound is 0.01 mass % or greater and 10 mass % or less based on a total mass of the polishing agent.

22. The polishing agent according to claim 2, wherein a pH is 3.0 or greater and 12.0 or less.

23. The polishing agent according to claim 2, used for polishing of a surface to be polished containing silicon oxide.

24. A polishing agent set comprising constituent components of the polishing agent according to claim 2 separately stored as a first liquid and a second liquid,

the first liquid containing the abrasive grains and water, and

the second liquid containing the at least one glycerin compound and water.

25. A polishing method for a base substrate, comprising a step of polishing a surface to be polished of a base substrate using the polishing agent according to claim 2.

26. A polishing method for a base substrate, comprising a step of polishing a surface to be polished of a base substrate using a polishing agent obtained by mixing the first liquid and the second liquid of the polishing agent set according to claim 24.

27. A polishing method for a base substrate having an insulating material and polysilicon,

the polishing method comprising a step of selectively polishing the insulating material with respect to the polysilicon using the polishing agent according to claim 2.

28. A polishing method for a base substrate having an insulating material and polysilicon,

the polishing method comprising a step of selectively polishing the insulating material with respect to the polysilicon using a polishing agent obtained by mixing the first liquid and the second liquid of the polishing agent set according to claim 24.

29. A polishing agent comprising:

water,

abrasive grains containing a hydroxide of tetravalent cerium, wherein the abrasive grains produce light transmittance of 50%/cm or greater for light with a wavelength of 500 nm in an aqueous dispersion having the abrasive grain content adjusted to 1.0 mass %, and

at least one glycerin compound represented by general formula (I) below;

30. The polishing agent according to claim 29, further comprising at least one hydroxide of a tetravalent metal element selected from the group consisting of hydroxide of a rare earth metal element other than cerium and hydroxide of zirconium.

31. The polishing agent according to claim 29, wherein a mean particle diameter of the abrasive grains is 1 nm or greater and 300 nm or less.

32. The polishing agent according to claim 29, wherein a content of the abrasive grains is 0.005 mass % or greater and 20 mass % or less based on a total mass of the polishing agent.

33. The polishing agent according to claim 29, wherein a weight-average molecular weight of the at least one glycerin compound is 250 or greater and 10×

10³ or less.

34. The polishing agent according to claim 29, wherein a content of the at least one glycerin compound is 0.01 mass % or greater and 10 mass % or less based on a total mass of the polishing agent.

35. The polishing agent according to claim 29, wherein a pH is 3.0 or greater and 12.0 or less.

36. The polishing agent according to claim 29, used for polishing of a surface to be polished containing silicon oxide.

37. A polishing agent set comprising constituent components of the polishing agent according to claim 29 separately stored as a first liquid and a second liquid,

the first liquid containing the abrasive grains and water, and

the second liquid containing the at least one glycerin compound and water.

38. A polishing method for a base substrate, comprising a step of polishing a surface to be polished of a base substrate using the polishing agent according to claim 29.

39. A polishing method for a base substrate, comprising a step of polishing a surface to be polished of a base substrate using a polishing agent obtained by mixing the first liquid and the second liquid of the polishing agent set according to claim 37.

40. A polishing method for a base substrate having an insulating material and polysilicon,

the polishing method comprising a step of selectively polishing the insulating material with respect to the polysilicon using the polishing agent according to claim 29.

41. A polishing method for a base substrate having an insulating material and polysilicon,

the polishing method comprising a step of selectively polishing the insulating material with respect to the polysilicon using a polishing agent obtained by mixing the first liquid and the second liquid of the polishing agent set according to claim 37.

42. A polishing agent comprising:

water,

abrasive grains containing a hydroxide of tetravalent cerium, wherein the abrasive grains produce light transmittance of 50%/cm or greater for light with a wavelength of 500 nm in an aqueous dispersion having the abrasive grain content adjusted to 1.0 mass %, and

at least one glycerin compound selected from the group consisting of polyglycerin, diglycerin derivatives and polyglycerin derivatives, and

HLB value of the at least one glycerin compound being 19.8 to 20.0.

43. The polishing agent according to claim 42, wherein the at least one glycerin compound is a polyoxyalkylene diglyceryl ether.

44. The polishing agent according to claim 42, wherein the at least one glycerin compound is a polyoxyalkylene polyglyceryl ether.

45. The polishing agent according to claim 42, further comprising at least one hydroxide of a tetravalent metal element selected from the group consisting of hydroxide of a rare earth metal element other than cerium and hydroxide of zirconium.

46. The polishing agent according to claim 42, wherein a mean particle diameter of the abrasive grains is 1 nm or greater and 300 nm or less.

47. The polishing agent according to claim 42, wherein a content of the abrasive grains is 0.005 mass % or greater and 20 mass % or less based on a total mass of the polishing agent.

48. The polishing agent according to claim 42, wherein a weight-average molecular weight of the at least one glycerin compound is 250 or greater and 10×

10³ or less.

49. The polishing agent according to claim 42, wherein a content of the at least one glycerin compound is 0.01 mass % or greater and 10 mass % or less based on a total mass of the polishing agent.

50. The polishing agent according to claim 42, wherein a pH is 3.0 or greater and 12.0 or less.

51. The polishing agent according to claim 42, used for polishing of a surface to be polished containing silicon oxide.

52. A polishing agent set comprising constituent components of the polishing agent according to claim 42 separately stored as a first liquid and a second liquid,

the first liquid containing the abrasive grains and water, and

the second liquid containing the at least one glycerin compound and water.

53. A polishing method for a base substrate, comprising a step of polishing a surface to be polished of a base substrate using the polishing agent according to claim 42.

54. A polishing method for a base substrate, comprising a step of polishing a surface to be polished of a base substrate using a polishing agent obtained by mixing the first liquid and the second liquid of the polishing agent set according to claim 52.

55. A polishing method for a base substrate having an insulating material and polysilicon,

the polishing method comprising a step of selectively polishing the insulating material with respect to the polysilicon using the polishing agent according to claim 42.

56. A polishing method for a base substrate having an insulating material and polysilicon,

the polishing method comprising a step of selectively polishing the insulating material with respect to the polysilicon using a polishing agent obtained by mixing the first liquid and the second liquid of the polishing agent set according to claim 52.