Thin film transistor, array substrate and manufacturing method thereof, and display device

  • US 10,204,922 B2
  • Filed: 01/13/2016
  • Issued: 02/12/2019
  • Est. Priority Date: 07/31/2015
  • Status: Active Grant
First Claim
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1. A manufacturing method of a metal oxide thin film transistor, comprising forming a gate electrode, a gate insulating layer, an active layer and source and drain electrodes of a thin film transistor on a base substrate,wherein the active layer is prepared by using a metal oxide thin film, and an electrochemical oxidation process is performed on the metal oxide thin film during preparing the active layer, and the metal oxide thin film after the electrochemical oxidation process is patterned to form the active layer of the thin film transistor, andwherein performing the electrochemical oxidation process on the metal oxide thin film includes:

  • taking the metal oxide thin film as an anode, placing a cathode and the base substrate where the metal oxide thin film has been formed in an electrolyte solution, and then energizing to perform the electrochemical oxidation process.

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