Thin film transistor and method for manufacturing the same, and display panel

  • US 10,204,933 B2
  • Filed: 04/07/2016
  • Issued: 02/12/2019
  • Est. Priority Date: 09/07/2015
  • Status: Active Grant
First Claim
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1. A method for manufacturing a thin film transistor, wherein the thin film transistor includes a metal electrode, the method includes a step of forming the metal electrode, and the step of forming the metal electrode includes:

  • forming a first material layer on a substrate;

    performing a pattering process on the first material layer to form a groove pattern in the first material layer such that the groove pattern matches with a pattern of the metal electrode to be formed;

    forming the metal electrode in the groove pattern such that the metal electrode is up-narrow and down-wide, and an up-wide and down-narrow gap is formed between an edge of the metal electrode and an edge of the groove pattern;

    forming a protection layer on the patterned first material layer and the metal electrode, and in the up-wide and down-narrow gap; and

    forming a protection pattern from the protection layer such that the protection pattern covers the metal electrode and its edge;

    wherein the step of forming a protection pattern on the substrate formed with the metal electrode includes;

    heating the protection layer such that a part of the protection layer in the up-wide and down-narrow gap is broken to form a first part covering the metal electrode and its edge and a second part covering the first material layer; and

    removing the first material layer and the second part of the protection layer on the first material layer to obtain the protection pattern covering the metal electrode and its edge.

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