Manufacturing method of metal layer, functional substrate and manufacturing method thereof, and display device

• US 10,209,584 B2
• Filed: 01/03/2017
• Issued: 02/19/2019
• Est. Priority Date: 04/11/2016
• Status: Expired due to Fees

• Current Assignee: Beijing BOE Display Technology Co Ltd (BOE Technology Group Co., Ltd.), BOE Technology Group Co., Ltd.
• Original Assignee: Beijing BOE Display Technology Co Ltd (BOE Technology Group Co., Ltd.), BOE Technology Group Co., Ltd.
• Inventors: Zhang, Xiaoxiang, Luo, Liping, Liu, Mingxuan, Guo, Huibin, Zhang, Zhichao
• Primary Examiner(s): Dickey, Thomas L
• Application Number:
  US15/541,580
• Publication Number:
  US 20180203281A1
• Time in Patent Office: 777 Days
• CPC Class Codes: G02B 5/201 in the form of arrays
• CPC Class Codes: G02F 1/133345 Insulating layers G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence
• CPC Class Codes: G02F 1/133502 Antiglare, refractive index matching layers
• CPC Class Codes: G02F 1/133514 Colour filters
• CPC Class Codes: G02F 1/133553 Reflecting elements associated to illuminating devices G02F1/133605
• CPC Class Codes: G02F 1/13439 characterised by their electrical, optical, physical properties; materials therefor; method of making
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/136295 Materials; Compositions; Manufacture processes
• CPC Class Codes: G02F 2201/38 Anti-reflection arrangements
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1218 with a particular composition or structure of the substrate
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1262 with a particular formation, treatment or coating of the substrate
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H10K 50/854 comprising scattering means
• CPC Class Codes: H10K 50/865 : comprising light absorbing layers, e.g. light-blocking layers
• CPC Class Codes: H10K 59/12 : Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 77/10 : Substrates, e.g. flexible substrates
• CPC Class Codes: Y02E 10/549 : Organic PV cells
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product

Abstract

A manufacturing method of a metal layer, a functional substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method of a metal layer includes: forming an insulating layer on a base substrate; forming an etching buffer layer on the insulating layer; patterning the etching buffer layer and the insulating layer to form a plurality of recessed microstructures in the insulating layer; stripping the etching buffer layer; and forming a metal layer on the insulating layer, a surface of the metal layer adjacent to the insulating layer is formed with a plurality of protruded portions which are filled into the plurality of recessed microstructures. The manufacturing method of a metal layer may form a metal layer with anti-reflection effect.

Claims

1. A manufacturing method of a metal layer, comprising:

forming an insulating layer on a base substrate;

forming an etching buffer layer on the insulating layer;

simultaneously patterning the etching buffer layer and the insulating layer to form a plurality of recessed microstructures in the insulating layer;

stripping the etching buffer layer; and

forming a metal layer on the insulating layer, wherein, a surface of the metal layer adjacent to the insulating layer is formed with a plurality of protruded portions which are filled into the plurality of recessed microstructures.

2. The manufacturing method of a metal layer according to claim 1, wherein, forming photoresist on the etching buffer layer;

utilizing a mask plate to expose the photoresist and developing the photoresist to form a photoresist pattern; and

etching the etching buffer layer and the insulating layer with the photoresist pattern as a mask, so as to pattern the etching buffer layer and the insulating layer to form the plurality of recessed microstructures in the insulating layer.

3. The manufacturing method of a metal layer according to claim 2, wherein, in a process of etching the etching buffer layer and the insulating layer with the photoresist pattern as a mask, an etching rate of the etching buffer layer is greater than or equal to an etching rate of the insulating layer.

4. The manufacturing method of a metal layer according to claim 1, wherein, the plurality of recessed microstructures comprise micropores or microgrooves.

5. The manufacturing method of a metal layer according to claim 4, wherein, the micropores comprise inverted conical holes, inverted frustum holes or inverted hemispherical holes.

6. The manufacturing method of a metal layer according to claim 1, wherein, the plurality of recessed microstructures are arranged in regular arrangement.

7. The manufacturing method of a metal layer according to claim 1, wherein, the etching buffer layer comprises deep ultraviolet light-absorbing oxide.

8. The manufacturing method of a metal layer according to claim 1, wherein, the insulating layer has a thickness of 500-1500 Å

.

9. The manufacturing method of a metal layer according to claim 1, wherein, the plurality of recessed microstructures penetrate or do not penetrate the insulating layer.

10. A manufacturing method of a functional substrate, comprising:

forming a metal layer on a base substrate; and

patterning the metal layer to form a conductive structure, wherein, the metal layer is formed by the manufacturing method of a metal layer according to claim 1.

11. The manufacturing method of a functional substrate according to claim 10, wherein, the conductive structure comprises a gate line, a gate electrode, a data line, a source electrode, a drain electrode or a touch electrode.

12. A functional substrate, comprising:

a base substrate, an insulating layer disposed on the base substrate and a conductive structure disposed on the insulating layer,

wherein, the conductive structure comprises a metal layer, wherein, the insulating layer is provided with a plurality of recessed microstructures, a surface of the metal layer adjacent to the insulating layer is formed with a plurality of protruded portions which are filled into the plurality of recessed microstructures,

the conductive structure comprises a gate line, a gate electrode, a data line, a source electrode, a drain electrode or a touch electrode.

13. The functional substrate according to claim 12, wherein, the plurality of recessed microstructures comprise micropores or microgrooves.

14. The functional substrate according to claim 13, wherein, the micropores comprise inverted conical holes, inverted frustum holes or inverted hemispherical holes.

15. The functional substrate according to claim 12, wherein, the plurality of recessed microstructures are arranged in regular arrangement.

16. The functional substrate according to claim 12, wherein, the insulating layer has a thickness of 500-1500 Å

.

17. The functional substrate according to claim 12, wherein, the plurality of recessed microstructures penetrate or do not penetrate the insulating layer.

18. A display device, comprising the functional substrate according to claim 12.

19. The display device according to claim 18, further comprising:

a color filter substrate and a liquid crystal layer, wherein, the liquid crystal layer is disposed between the functional substrate and the color filter substrate, a surface of the functional substrate facing away from the liquid crystal layer is a light exit surface of the display device.

20. A display device, comprising:

a functional substrate, wherein the functional substrate comprises;

a base substrate, an insulating layer disposed on the base substrate and a conductive structure disposed on the insulating layer, the conductive structure comprises a metal layer, the insulating layer is provided with a plurality of recessed microstructures, a surface of the metal layer adjacent to the insulating layer is formed with a plurality of protruded portions which are filled into the plurality of recessed microstructures;

a color filter substrate; and

a liquid crystal layer,

wherein, the liquid crystal layer is disposed between the functional substrate and the color filter substrate, a surface of the functional substrate facing away from the liquid crystal layer is a light exit surface of the display device.