Dynamic substrate biasing for extended voltage operation

  • US 10,242,979 B1
  • Filed: 06/26/2018
  • Issued: 03/26/2019
  • Est. Priority Date: 06/26/2018
  • Status: Active Grant
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First Claim
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1. A biased substrate circuit comprising:

  • an integrated circuit (IC) layer divided into wells by dielectric isolation regions of a dielectric isolation material, the dielectric isolation material having a first breakdown voltage;

    a base substrate layer separated from the IC layer by an insulation layer having a second breakdown voltage; and

    a voltage protection stack coupled to the base substrate layer in at least two different locations, the voltage protection stack including a plurality of voltage protection components, the voltage protection stack having a stack breakdown voltage greater than the first breakdown voltage and the second breakdown voltage.

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