Semiconductor device and power receiving device

• US 10,256,669 B2
• Filed: 11/28/2016
• Issued: 04/09/2019
• Est. Priority Date: 08/31/2006
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Osada, Takeshi, Tamura, Hikaru
• Primary Examiner(s): Trinh, Michael M
• Application Number:
  US15/362,175
• Publication Number:
  US 20170077763A1
• Time in Patent Office: 862 Days
• CPC Class Codes: B60L 1/00 Supplying electric power to auxiliary equipment of vehicles circuit arrangements for charging batteries H02J7/00
• CPC Class Codes: G06K 19/0701 at least one of the integrated circuit chips comprising an arrangement for power management
• CPC Class Codes: G06K 19/0705 the battery being connected to a power saving arrangement
• CPC Class Codes: G06K 19/0723 the record carrier comprising an arrangement for non-contact communication, e.g. wireless communication circuits on transponder cards, non-contact smart cards or RFIDs
• CPC Class Codes: G06K 19/0724 the arrangement being a circuit for communicating at a plurality of frequencies, e.g. for managing time multiplexed communication over at least two antennas of different types
• CPC Class Codes: G06K 19/07767 the first and second communication means being two different antennas types, e.g. dipole and coil type, or two antennas of the same kind but operating at different frequencies
• CPC Class Codes: G06K 19/07773 Antenna details antennas for wireless devices, e.g. RFID tags, in general H01Q1/22
• CPC Class Codes: G06K 19/07779 the inductive antenna being a coil
• CPC Class Codes: G06K 19/07783 the coil being planar
• CPC Class Codes: H01L 2223/6677 for antenna, e.g. antenna included within housing of semiconductor device antennas per se H01Q
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
• CPC Class Codes: H02J 50/12 of the resonant type
• CPC Class Codes: H02J 50/20 using microwaves or radio frequency waves
• CPC Class Codes: H02J 50/80 involving the exchange of data, concerning supply or distribution of electric power, between transmitting devices and receiving devices
• CPC Class Codes: H04B 5/79 for data transfer in combination with power transfer
• CPC Class Codes: Y02D 30/70 in wireless communication networks
• CPC Class Codes: Y02T 90/16 Information or communication technologies improving the operation of electric vehicles

Abstract

An object is to provide a semiconductor device that is capable of wireless communication, such as an RFID tag, which can transmit and receive individual information without checking remaining capacity of a battery or changing batteries due to deterioration with time in the battery for a drive power supply voltage, and maintain a favorable a transmission/reception state even when electric power of an electromagnetic wave from a reader/writer is not sufficient. The semiconductor device includes a signal processing circuit, a first antenna circuit connected to the signal processing circuit, an antenna circuit group, a rectifier circuit-group and a battery connected to the signal processing circuit. The first antenna circuit transmits and receives a signal for transmitting data stored in the signal processing circuit and drives a power supply circuit, and each antenna circuit of the antenna circuit group receives a signal for charging the battery and includes an antenna which has a different corresponding frequency.

Claims

1. A method for manufacturing a semiconductor device comprising:

forming a peeling layer over a first substrate;

forming a first transistor and a second transistor over the peeling layer;

forming an insulating layer over the first transistor and the second transistor;

forming a first antenna and a second antenna over the insulating layer;

forming an opening in the insulating layer;

attaching a first sheet material over the insulating layer after forming the opening;

separating the transistor from the first substrate at the peeling layer;

attaching a second sheet material under the first transistor and the second transistor;

removing the first sheet material; and

electrically connecting a first connection terminal provided over a second substrate to the first transistor and a second connection terminal provided over a third substrate to the second transistor,

wherein the second substrate and the third substrate are spaced apart from each other,

wherein the first transistor is interposed between the second sheet material and the second substrate, and the second transistor is interposed between the second sheet material and the third substrate, and

wherein the second substrate does not overlap the first antenna or the second antenna, and the third substrate does not overlap the first antenna or the second antenna.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the peeling layer is a metal film.

3. The method for manufacturing a semiconductor device according to claim 1, wherein the first connection terminal or the second connection, terminal is a connection terminal of a battery.

4. A method for manufacturing a semiconductor device comprising:

forming a peeling layer over a first substrate;

forming a first transistor and a second transistor over the peeling layer;

forming an insulating layer over the first transistor and the second transistor;

forming a first antenna and a second antenna over the insulating layer;

forming an opening in the insulating layer by laser irradiation;

attaching a first sheet material over the insulating layer after forming the opening;

separating the transistor from the first substrate at the peeling layer;

attaching a second sheet material under the first transistor and the second transistor;

removing the first sheet material; and

electrically connecting a first connection terminal provided over a second substrate to the first transistor and a second connection terminal provided over a third substrate to the second transistor,

wherein the second substrate and the third substrate are spaced apart from each other,

wherein the first transistor is interposed between the second sheet material and the second substrate, and the second transistor is interposed between the second sheet material and the third substrate, and

wherein the second substrate does not overlap the first antenna or the second antenna, and the third substrate does not overlap the first antenna or the second antenna.

5. The method for manufacturing a semiconductor device according to claim 4, wherein the peeling layer is a metal film.

6. The method for manufacturing a semiconductor device according to claim 4, wherein the first connection terminal or the second connection terminal is a connection terminal of a battery.