Radio frequency switch
First Claim
1. A radio frequency switch comprising a first node, a second node, and a plurality of switch cells that are coupled in series between the first node and the second node wherein each of the plurality of switch cells comprises:
- a main field-effect transistor (FET) comprising a main drain terminal, a main source terminal, a main gate terminal, and a main body terminal; and
an off-state linearization network comprising;
a first body bias FET having a first drain terminal coupled to the main gate terminal, a first gate terminal coupled to the main drain terminal, a first body terminal coupled to the main body terminal, and a first source terminal; and
a second body bias FET having a second drain terminal coupled to the main gate terminal, a second body terminal coupled to the main body terminal, and a second source terminal coupled to the first source terminal.
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Accused Products
Abstract
A radio frequency switch having a first node, a second node, and a plurality of switch cells that are coupled in series between the first node and the second node is disclosed. Each of the plurality of switch cells is made up of a main field-effect transistor (FET) having a main drain terminal, a main source terminal, a main gate terminal, and a main body terminal. Further included is a first body bias FET having a first drain terminal coupled to the main gate terminal, a first gate terminal coupled to the main drain terminal, a first body terminal coupled to the main body terminal, and a first source terminal, and a second body bias FET having a second drain terminal coupled to the main gate terminal, a second body terminal coupled to the main body terminal, and a second source terminal coupled to the first source terminal.
29 Citations
20 Claims
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1. A radio frequency switch comprising a first node, a second node, and a plurality of switch cells that are coupled in series between the first node and the second node wherein each of the plurality of switch cells comprises:
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a main field-effect transistor (FET) comprising a main drain terminal, a main source terminal, a main gate terminal, and a main body terminal; and an off-state linearization network comprising; a first body bias FET having a first drain terminal coupled to the main gate terminal, a first gate terminal coupled to the main drain terminal, a first body terminal coupled to the main body terminal, and a first source terminal; and a second body bias FET having a second drain terminal coupled to the main gate terminal, a second body terminal coupled to the main body terminal, and a second source terminal coupled to the first source terminal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A radio frequency switch cell comprising:
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a main field-effect transistor (FET) comprising a main drain terminal, a main source terminal, a main gate terminal, and a main body terminal; and an off-state linearization network comprising; a first body bias FET having a first drain terminal coupled to the main gate terminal, a first gate terminal coupled to the main drain terminal, a first body terminal coupled to the main body terminal, and a first source terminal; and a second body bias FET having a second drain terminal coupled to the main gate terminal, a second body terminal coupled to the main body terminal, and a second source terminal coupled to the first source terminal. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification