Screen printing electrical contacts to nanostructured areas

  • US 10,269,995 B2
  • Filed: 06/14/2017
  • Issued: 04/23/2019
  • Est. Priority Date: 02/14/2012
  • Status: Active Grant
First Claim
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1. A silicon nanostructured device comprising:

  • a non-nanostructured substrate;

    a nanostructured area disposed on and contacting a surface of the substrate;

    a passivating layer coating the nanostructured area, the passivating layer comprising one of aluminum oxide, silicon dioxide, or silicon nitride;

    a first contact comprising a comb-like pattern of metal directly contacting the nanostructured area;

    a p-n junction below the nanostructured area; and

    a second metal contact in electrical contact with the substrate.

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