Dual zone common catch heat exchanger/chiller

• US 10,274,270 B2
• Filed: 10/08/2012
• Issued: 04/30/2019
• Est. Priority Date: 10/27/2011
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Silveira, Fernando, Mays, Brad L.
• Primary Examiner(s): Hassanzadeh, Parviz
• Assistant Examiner(s): Nuckols, Tiffany Z
• Application Number:
  US13/647,314
• Publication Number:
  US 20130105081A1
• Time in Patent Office: 2,395 Days
• Field of Search: 118715-733, 1563451-34555
• CPC Class Codes: F28D 2021/0077 for tempering, e.g. with cooling or heating circuits for temperature control of elements
• CPC Class Codes: F28F 27/02 for controlling the distribution of heat-exchange media between different channels static flow control means in header boxes F28F9/026; arrangements of guide plates or guide vanes F28F9/22, F28F25/12
• CPC Class Codes: H01J 2237/2001 Maintaining constant desired temperature
• CPC Class Codes: H01J 37/32724 Temperature

Abstract

Methods and systems for controlling temperatures in plasma processing chamber via pulsed application of heating power and pulsed application of cooling power. In an embodiment, fluid levels in each of a hot and cold reservoir coupled to the temperature controlled component are maintained in part by a coupling each of the reservoirs to a common secondary reservoir. Heat transfer fluid is pumped from the secondary reservoir to either the hot or cold reservoir in response to a low level sensed in the reservoir. In an embodiment, both the hot and cold reservoirs are contained in a same platform as the secondary reservoir with the hot and cold reservoirs disposed above the secondary reservoir to permit the secondary reservoir to catch gravity driven overflow from either the hot or cold reservoir.

Claims

1. A plasma processing apparatus, comprising:

a process chamber including a chuck configured to support a workpiece during processing;

a first primary heat transfer fluid tank having a heat transfer fluid at a first temperature;

a second primary heat transfer fluid tank having a heat transfer fluid at a second temperature;

supply lines and return lines coupling each of the first and second primary heat transfer fluid tanks to the chuck for conducting heat transfer fluid at the first and second temperature through the chuck;

a secondary reservoir fluidly coupled to both the first primary heat transfer fluid tank and the second primary heat transfer fluid tank, wherein each of the first and second primary heat transfer fluid tanks are disposed with an overflow conduit directly above and over the secondary reservoir to overflow heat transfer fluid by gravity directly into the secondary reservoir below in response to the heat transfer fluid level within the first or second primary heat transfer fluid tank rising above a threshold level, wherein the secondary reservoir is coupled directly to the first primary heat transfer fluid tank by a first replenish conduit separate from the supply and return lines, and wherein the secondary reservoir is coupled directly to the second primary heat transfer fluid tank by a second replenish conduit separate from the supply and return lines; and

a first pump to dispense heat transfer fluid from the secondary reservoir to the first or second primary heat transfer fluid tank in response to a sensor indicating a heat transfer fluid level within the first or second primary heat transfer fluid reservoir tank dropping below a threshold level.

2. The apparatus as in claim 1, further comprising a second pump responsive to a second level sensor disposed in the second primary heat transfer fluid tank and wherein the first pump is responsive to a first level sensor disposed in the first primary heat transfer fluid tank.

3. The apparatus as in claim 1, further comprising a first digital valve disposed in-line with each of the supply lines or return lines, and wherein the apparatus further comprises a controller to modulate a pulse width modulation duty cycle driving the first digital valve between a fully open state and a fully closed state, and wherein one of the first valves is to be in the off state when the other of the first valves is in the on state.

4. The apparatus as in claim 3, wherein the first and second temperatures have a temperature difference of at least 50°

C. and wherein the heat transfer fluid comprises liquid.

5. The apparatus as in claim 4, wherein the plasma processing system comprises a high bias power density RF source to energize a plasma in the process chamber through the chuck.

6. The apparatus as in claim 1, wherein the heat transfer fluid in the first primary heat transfer fluid tank is controlled to the first temperature by a first heat exchanger and wherein the heat transfer fluid in the second primary heat transfer fluid tank is controlled to the second temperature by a second heat exchanger.

7. The plasma etch apparatus as in claim 1, wherein the heat transfer fluid in the first primary heat transfer fluid tank is controlled to the first temperature by a first heat exchanger and wherein the heat transfer fluid in the second primary heat transfer fluid tank is controlled to the second temperature by a second heat exchanger.

8. A plasma etch apparatus, comprising:

a process chamber including a chuck configured to support a workpiece during plasma etching of the workpiece;

a first primary heat transfer fluid tank having a heat transfer fluid controlled to a first temperature by a first heat exchanger;

a second primary heat transfer fluid tank having a heat transfer fluid controlled to a second temperature by a second heat exchanger;

a first supply line and first return line coupling the first primary heat transfer fluid tank to the chuck for circulating heat transfer fluid at the first temperature through the chuck;

a second supply line and second return line coupling the second primary heat transfer fluid tank to the chuck for circulating heat transfer fluid at the second temperature through the chuck;

a secondary reservoir fluidly coupled to both the first primary heat transfer fluid reservoir tank and the second primary heat transfer fluid tank, wherein each of the first and second primary heat transfer fluid tanks are disposed with an overflow conduit directly above and over the secondary reservoir to overflow heat transfer fluid by gravity directly into the secondary reservoir in response to the heat transfer fluid level within the first or second primary heat transfer fluid tank rising above a threshold level, wherein the secondary reservoir is coupled directly to the first primary heat transfer fluid tank by a first replenish conduit separate from the supply and return lines, and wherein the secondary reservoir is coupled directly to the second primary heat transfer fluid tank by a second replenish conduit separate from the supply and return lines; and

at least one pump to dispense heat transfer fluid from the secondary reservoir to at least one of the first or second primary heat transfer fluid tanks in response to a sensor indicating a heat transfer fluid level within the first or second primary heat transfer fluid tank dropping below a threshold level.

9. The plasma etch apparatus as in claim 8, further comprising a first digital valve disposed in-line with each of the supply lines or return lines, and wherein the apparatus further comprises a controller to modulate a pulse width modulation duty cycle driving the first digital valve between a fully open state and a fully closed state, and wherein one of the first valves is to be in the off state when the other of the first valves is in the on state.