Composite film and fabrication method thereof, photoelectric element and photoelectric apparatus

• US 10,287,493 B2
• Filed: 10/18/2017
• Issued: 05/14/2019
• Est. Priority Date: 10/21/2013
• Status: Active Grant

• Current Assignee: BOE Technology Group Co., Ltd.
• Original Assignee: BOE Technology Group Co., Ltd.
• Inventors: Gu, Jingxia, Tang, Chen
• Primary Examiner(s): Hoban, Matthew E.
• Assistant Examiner(s): Edmondson, Lynne
• Application Number:
  US15/787,207
• Publication Number:
  US 20180037814A1
• Time in Patent Office: 573 Days
• Field of Search: 25230133
• CPC Class Codes: B05D 1/005 Spin coating
• CPC Class Codes: C08G 2261/1412 Saturated aliphatic units
• CPC Class Codes: C08G 2261/3142 fluorene-based, e.g. fluorene, indenofluorene, or spirobifluorene
• CPC Class Codes: C08G 2261/5222 electrofluorescent
• CPC Class Codes: C08G 2261/95 Use in organic luminescent diodes
• CPC Class Codes: C08G 61/02 Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
• CPC Class Codes: C08K 2003/3036 of zinc
• CPC Class Codes: C08K 3/30 Sulfur-, selenium- or tellurium-containing compounds
• CPC Class Codes: C08L 65/00 Compositions of macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain C08L7/00 - C08L57/00, C08L61/00 take precedence; Compositions of derivatives of such polymers
• CPC Class Codes: C09K 11/06 containing organic luminescent materials
• CPC Class Codes: C09K 11/565 with zinc cadmium
• CPC Class Codes: C09K 2211/1416 Condensed systems
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H10K 50/115 comprising active inorganic nanostructures, e.g. luminescent quantum dots
• CPC Class Codes: H10K 71/12 using liquid deposition, e.g. spin coating
• CPC Class Codes: H10K 85/115 Polyfluorene; Derivatives thereof

Abstract

Embodiments of the invention relate to a composite film and a fabrication method thereof, a photoelectric element and a photoelectric apparatus. The fabrication method of the composite film includes: preparing a polyfluorene-based compound solution, wherein the polyfluorene-based compound solution includes polyfluorene or polyfluorene derivatives; preparing a quantum dot solution; mixing the polyfluorene-based compound solution and the quantum dot solution together to prepare a mixed solution; removing a solvent in the mixed solution to prepare the composite film.

Claims

1. A composite film which consists of:

a polyfluorene or a polyfluorene derivative; and

quantum dots;

wherein the polyfluorene derivative includes one or more materials selected from the group consisting of poly (9,9-dialkyl fluorene), copolymer of bis-hexyl fluorene and anthracene, biphenyl with dendrite-containing side chains, tetra-alkyl-substituted indenofluorene polymer, aryl-substituted indenofluorene polymer, polyfluorene-bithiophene alternate copolymer, as well as, binary or ternary random copolymers of fluorene and thiophene, ethylene dioxythiophene, 4,7-dithiophene-2,1,3-benzothiadiazole, or 4,7-dithiophene-2,1,3-benzoselenadiazole.

2. The composite film according to claim 1, wherein, in the composite film, a range of mass ratio of the polyfluorene or the polyfluorene derivative to the quantum dots is 400:

1-5;

1.

3. The composite film according to claim 1, wherein the quantum dots include at least one of Group II-VI element compounds and Group III-V element compounds.

4. The composite film according to claim 3, wherein a material of the quantum dots is at least one selected from the group consisting of ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, BN, BP, BAs, BSb, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InAs, InN, InP and InSb.

5. A photoelectric element, comprising the composite film according to claim 1.

6. The photoelectric element according to claim 5, wherein, in the composite film, a range of mass ratio of the polyfluorene or the polyfluorene derivative to the quantum dots is 400:

1-5;

1.

7. The photoelectric element according to claim 5, wherein the quantum dots include at least one of Group II-VI element compounds and Group III-V element compounds.

8. The photoelectric element according to claim 7, wherein a material of the quantum dots is at least one selected from the group consisting of ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, HgTe, BN, BP, BAs, BSb, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InAs, InN, InP and InSb.