Array substrate, display panel and display apparatus having the same, and fabricating method thereof

• US 10,290,684 B2
• Filed: 10/11/2016
• Issued: 05/14/2019
• Est. Priority Date: 03/25/2016
• Status: Active Grant

• Current Assignee: BOE Technology Group Co., Ltd.
• Original Assignee: BOE Technology Group Co., Ltd.
• Inventors: Zhang, Feng, Liu, Zhen, Liu, Jing
• Primary Examiner(s): Pham, Thanhha S
• Application Number:
  US15/520,554
• Publication Number:
  US 20180083070A1
• Time in Patent Office: 945 Days
• CPC Class Codes: G02F 1/133509 Filters, e.g. light shielding masks
• CPC Class Codes: G02F 1/133514 Colour filters
• CPC Class Codes: G02F 1/133521 Interference filters
• CPC Class Codes: G02F 1/133553 Reflecting elements associated to illuminating devices G02F1/133605
• CPC Class Codes: G02F 1/136222 Colour filters incorporated in the active matrix substrate
• CPC Class Codes: G02F 2202/32 Photonic crystals
• CPC Class Codes: G02F 2202/36 Micro- or nanomaterials
• CPC Class Codes: G02F 2203/10 plasmon
• CPC Class Codes: H01L 27/1262 with a particular formation, treatment or coating of the substrate
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]

Abstract

The present application discloses an array substrate having a subpixel region and an inter-subpixel region, a display panel and a display apparatus having the same, and a fabricating method thereof. The array substrate includes a plasmonic color filter layer including a plurality of color filter blocks in the subpixel region on a base substrate. Each of the plurality of color filter blocks includes a plurality of plasmonic nanostructures made of a semiconductor material. A first color filter block corresponding to a subpixel of a first color has an arrangement of nanostructures different from that of a second color filter block corresponding to a subpixel of a second color; the second color being different from the first color.

Claims

1. An array substrate having a subpixel region and an inter-subpixel region, comprising:

a plasmonic color filter layer comprising a plurality of color filter blocks in the subpixel region on a base substrate; and

a plurality of thin film transistors, a respective one of the plurality of thin film transistors comprising an active layer;

wherein a respective one of the plurality of color filter blocks comprises a plurality of plasmonic nanostructures made of a semiconductor material;

a first color filter block corresponding to a subpixel of a first color has a first arrangement of nanostructures;

a second color filter block corresponding to a subpixel of a second color has a second arrangement of nanostructures;

the first arrangement of nanostructures is different from the second arrangement of nanostructures;

the second color is different from the first color; and

the plasmonic color filter layer and the active layer are in a same layer and are made of a same material.

2. The array substrate of claim 1, wherein the plurality of plasmonic nanostructures in the respective one of the plurality of color filter blocks have a periodic arrangement of repeating plasmonic nanostructures.

3. The array substrate of claim 1, wherein the plurality of plasmonic nanostructures are made of polycrystalline silicon.

4. The array substrate of claim 3, wherein the plurality of plasmonic nanostructures are made of polycrystalline silicon doped with a dopant.

5. The array substrate of claim 1, wherein at least one of the plurality of color filter blocks comprises an array of plasmonic nanostructures having an array pitch and nanostructure size;

light configured to transmitted through the first color filter block has a first wavelength;

light configured to transmitted through the second color filter block has a second wavelength;

the first wavelength being larger than the second wavelength;

an array of plasmonic nanostructures in the first color filter block has a first array pitch and a first nanostructure size;

an array of plasmonic nanostructures in the second color filter block has a second array pitch and a second nanostructure size;

the first array pitch is larger than the second array pitch; and

the first nanostructure size is larger than the second nanostructure size.

6. The array substrate of claim 5, wherein a cross-section along a direction substantially parallel to the base substrate of a respective one of the plurality of plasmonic nanostructures has a shape selected from the group consisting of a circular shape, an elliptical shape, a square, and a regular polygon.

7. The array substrate of claim 6, wherein the plasmonic color filter layer comprises a red color filter block corresponding to a red subpixel, a green color filter block corresponding to a green subpixel, and a blue color filter block corresponding to a blue subpixel;

an array of plasmonic nanostructures in the red color filter block has an array pitch in a range of approximately 340 nm to approximately 360 nm, and a nanostructure size in a range of approximately 165 nm to approximately 185 nm;

an array of plasmonic nanostructures in the green color filter block has an array pitch in a range of approximately 230 nm to approximately 250 nm, and a nanostructure size in a range of approximately 110 nm to approximately 130 nm; and

an array of plasmonic nanostructures in the blue color filter block has an array pitch in a range of approximately 200 nm to approximately 220 nm, and a nanostructure size in a range of approximately 95 nm to approximately 115 nm.

8. The array substrate of claim 7, wherein

the array of plasmonic nanostructures in the red color filter block has an array pitch of approximately 350 nm, and a nanostructure size of approximately 175 nm;

the array of plasmonic nanostructures in the green color filter block has an array pitch of approximately 240 nm, and a nanostructure size of approximately 120 nm; and

the array of plasmonic nanostructures in the blue color filter block has an array pitch of approximately 210 nm, and a nanostructure size of approximately 105 nm.

9. The array substrate of claim 7, wherein a cross-section along a direction substantially parallel to the base substrate of the respective one of the plurality of plasmonic nanostructures has a circular shape;

and the nanostructure size is a nanostructure diameter of the circular shape.

10. The array substrate of claim 7, wherein a cross-section along a direction substantially parallel to the base substrate of the respective one of the plurality of plasmonic nanostructures has a square shape;

and the nanostructure size is a nanostructure width of the square shape.

11. The array substrate of claim 1, wherein at least one of the plurality of color filter blocks has a grating structure comprising a plurality of rows of rectangular plasmonic nanostructures;

the grating structure having a grating pitch, a respective row of the plurality of rows of rectangular plasmonic nanostructures having a nanostructure width;

light configured to transmitted through the first color filter block has a first wavelength;

light configured to transmitted through the second color filter block has a second wavelength;

the first wavelength being larger than the second wavelength;

a grating structure in the first color filter block has a first grating pitch and a first nanostructure width;

a grating structure in the second color filter block has a second grating pitch and a second nanostructure width;

the first grating pitch is larger than the second grating pitch; and

the first nanostructure width is larger than the second nanostructure width.

12. The array substrate of claim 11, wherein the plasmonic color filter layer comprises a red color filter block corresponding to a red subpixel, a green color filter block corresponding to a green subpixel, and a blue color filter block corresponding to a blue subpixel;

a grating structure in the red color filter block has a grating pitch in a range of approximately 340 nm to approximately 360 nm, and a nanostructure width in a range of approximately 165 nm to approximately 185 nm;

a grating structure in the green color filter block has a grating pitch in a range of approximately 230 nm to approximately 250 nm, and a nanostructure width in a range of approximately 110 nm to approximately 130 nm; and

a grating structure in the blue color filter block has a grating pitch in a range of approximately 200 nm to approximately 220 nm, and a nanostructure width in a range of approximately 95 nm to approximately 115 nm.

13. The array substrate of claim 12, wherein

the grating structure in the red color filter block has a grating pitch of approximately 350 nm, and a nanostructure width of approximately 175 nm;

the grating structure in the green color filter block has a grating pitch of approximately 240 nm, and a nanostructure width of approximately 120 nm; and

the grating structure in the blue color filter block has a grating pitch of approximately 210 nm, and a nanostructure width of approximately 105 nm.

14. The array substrate of claim 1, wherein the plasmonic color filter layer and the active layer are made of polycrystalline silicon.

15. A display panel, comprising an array substrate of claim 1.

16. The array substrate of claim 1, wherein the plasmonic color filter layer is doped with an n-type dopant.

17. The array substrate of claim 1, wherein the plasmonic color filter layer is doped with an n-type dopant.

18. A method of fabricating an array substrate having a subpixel region and an inter-subpixel region, comprising:

forming a plasmonic color filter layer on a base substrate;

the plasmonic color filter layer is formed to comprise a plurality of color filter blocks in the subpixel region; and

forming a plurality of thin film transistors, a respective one of the plurality of thin film transistors formed to comprise an active layer;

wherein a respective one of the plurality of color filter blocks is formed to comprise a plurality of plasmonic nanostructures made of a semiconductor material; and

a first color filter block corresponding to a subpixel of a first color has a first arrangement of nanostructures;

a second color filter block corresponding to a subpixel of a second color;

the second color being different from the first color has a second arrangement of nanostructures;

the first arrangement of nanostructures is different from the second arrangement of nanostructures;

the second color is different from the first color; and

the plasmonic color filter layer and the active layer are formed in a same layer and are made of a same material.

19. The method of claim 18, wherein the plurality of plasmonic nanostructures in the respective one of the plurality of color filter blocks are formed to have a periodic arrangement of repeating plasmonic nanostructures.

20. The method of claim 18, comprising:

forming a buffer layer on the base substrate;

forming an amorphous silicon layer on a side of the buffer layer distal to the base substrate;

crystallizing the amorphous silicon layer to form a polycrystalline silicon layer; and

patterning the polycrystalline silicon layer to form the plasmonic color filter layer and the active layer.