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Light emitting device for AC power operation

  • US 10,292,220 B2
  • Filed: 08/05/2016
  • Issued: 05/14/2019
  • Est. Priority Date: 06/28/2005
  • Status: Active Grant
First Claim
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1. A light-emitting device, comprising:

  • a light emitting device (LED) chip comprising an array of light emitting cells electrically connected in series disposed between a source terminal and a ground terminal, wherein each of the light emitting cells includes a first-type semiconductor layer, an active layer formed on the first-type semiconductor layer, and a second-type semiconductor layer formed on the active layer, wherein the first-type semiconductor layer is located between a first side and a second side of the first-type semiconductor layer that are opposite sides of the first-type semiconductor layer and has a portion not covered by the active layer and the second-type semiconductor layer, and wherein the first side is closer to the second-type semiconductor layer than the second side is;

    reflective layers formed on the light emitting cells;

    bumpers formed on the reflective layers;

    a power source connected to the source terminal to drive the light emitting cells of the array; and

    a switching block electrically connected to nodes between two adjacent light emitting cells of the array and the ground terminal to form current paths between the nodes of the array and the ground terminal based on a voltage level received from the power source such that the light emitting cells of the array are sequentially turned on and off,wherein a given light emitting cell in the array of light emitting cells is electrically connected to an adjacent light emitting cell through an electrical path connecting the not covered portion of a first-type semiconductor layer of the given light emitting cell to a second-type semiconductor layer of the adjacent light emitting cell, the entire electrical path disposed closer to the first side of the first-type semiconductor layer of the given light emitting cell than the second side of the first-type semiconductor layer of the given light emitting cell.

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