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Semiconductor based analyte sensors and methods

  • US 10,307,092 B2
  • Filed: 08/11/2016
  • Issued: 06/04/2019
  • Est. Priority Date: 02/04/2008
  • Status: Active Grant
First Claim
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1. An analyte sensor, comprising:

  • a substrate including;

    a care comprised of conductive material;

    a cladding comprised of semiconductor material and disposed around the core, wherein the cladding has a tensile strength of at least 1000 MPa;

    a working electrode formed from a portion of the cladding, the working electrode being at least partially coated with an electrochemically-active layer formed from at least one of a noble metal, carbon nanotubes, and a conductive polymer; and

    an active region positioned on the substrate and adapted to be exposed to a fluid environment, the active region including an agent on the electrochemically-active layer on the working electrode.

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