Nitride semiconductor device
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate comprising a nitride semiconductor;
a source electrode and a drain electrode each disposed on the semiconductor substrate; and
a gate electrode disposed on the semiconductor substrate via a gate insulator film,whereinthe semiconductor substrate comprises a first portion constituted of GaN and a second portion constituted of AlxGa(1-x)N(0<
x≤
1),the first portion comprises an n-type source region being in contact with the source electrode, an n-type drain region being in contact with the drain electrode, a p-type body region intervening between the source region and the drain region and being in contact with the source electrode, and an n-type drift region intervening between the body region and the drain region and having a carrier density that is lower than a carrier density of the drain region, andthe second portion comprises a barrier region being in contact with each of the source electrode, the body region and the drift region;
whereinthe semiconductor substrate comprises a first surface at which each of the source region, the body region and the drift region is disposed, andthe gate electrode faces a part of the body region extending between the source region and the drift region at the first surface via the gate insulator film.
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Accused Products
Abstract
A semiconductor device includes a semiconductor substrate, a source electrode, a drain electrode, and a gate electrode disposed on the semiconductor substrate via a gate insulator film. The semiconductor substrate includes a first portion constituted of GaN and a second portion constituted of AlxGa(1-x)N (0<x≤1). The first portion includes an n-type source region being in contact with the source electrode, an n-type drain region being in contact with the drain electrode, a p-type body region intervening between the source region and the drain region and being in contact with the source electrode, and an n-type drift region intervening between the body region and the drain region and having a carrier density that is lower than a carrier density of the drain region. The second portion includes a barrier region being in contact with each of the source electrode, the body region and the drift region.
8 Citations
6 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate comprising a nitride semiconductor; a source electrode and a drain electrode each disposed on the semiconductor substrate; and a gate electrode disposed on the semiconductor substrate via a gate insulator film, wherein the semiconductor substrate comprises a first portion constituted of GaN and a second portion constituted of AlxGa(1-x)N(0<
x≤
1),the first portion comprises an n-type source region being in contact with the source electrode, an n-type drain region being in contact with the drain electrode, a p-type body region intervening between the source region and the drain region and being in contact with the source electrode, and an n-type drift region intervening between the body region and the drain region and having a carrier density that is lower than a carrier density of the drain region, and the second portion comprises a barrier region being in contact with each of the source electrode, the body region and the drift region;
whereinthe semiconductor substrate comprises a first surface at which each of the source region, the body region and the drift region is disposed, and the gate electrode faces a part of the body region extending between the source region and the drift region at the first surface via the gate insulator film. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification