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RF switches, integrated circuits, and devices with multi-gate field effect transistors and voltage leveling circuits, and methods of their fabrication

  • US 10,326,018 B1
  • Filed: 02/28/2018
  • Issued: 06/18/2019
  • Est. Priority Date: 02/28/2018
  • Status: Active Grant
First Claim
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1. A field effect transistor (FET) circuit comprising:

  • a semiconductor substrate with an active surface;

    a source terminal coupled to the active surface;

    a drain terminal coupled to the active surface;

    a multi-gate FET channel in the semiconductor substrate between the source and drain terminals;

    a plurality of gate structures coupled to the active surface over the multi-gate FET channel;

    a first channel contact coupled to the active surface over the multi-gate FET channel between a first pair of gate structures of the plurality of gate structures;

    a first capacitor electrically coupled between the first channel contact and the source terminal; and

    a second capacitor electrically coupled between the first channel contact and the drain terminal.

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