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Method for manufacturing light-emitting device

  • US 10,326,100 B2
  • Filed: 11/21/2016
  • Issued: 06/18/2019
  • Est. Priority Date: 08/10/2012
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an exterior unit;

    a display panel over the exterior unit;

    a circuit over the display panel;

    a layer comprising metal over the circuit;

    a secondary battery over the layer comprising metal; and

    a first lid over the secondary battery,wherein each of the display panel and the circuit is provided in a first space formed between the exterior unit and the layer,wherein the secondary battery is provided in a second space formed between the layer and the first lid,wherein the display panel comprises a light-emitting element, andwherein a light-emitting region of the display panel comprises curved edge portions.

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