AMOLED display substrate, method for fabricating the same and display device

• US 10,355,064 B2
• Filed: 05/26/2017
• Issued: 07/16/2019
• Est. Priority Date: 06/24/2016
• Status: Active Grant

• Current Assignee: BOE Technology Group Co., Ltd.
• Original Assignee: BOE Technology Group Co., Ltd.
• Inventors: Gai, Cuili, Lin, Yicheng
• Primary Examiner(s): Toledo, Fernando L
• Assistant Examiner(s): Newton, Valerie N
• Application Number:
  US15/736,774
• Publication Number:
  US 20180358421A1
• Time in Patent Office: 781 Days
• Field of Search: None
• CPC Class Codes: G03F 7/16 Coating processes; Apparatus therefor applying coatings to base materials in general B05; applying photosensitive compositions to base for photographic purposes G03C1/74
• CPC Class Codes: G03F 7/20 Exposure; Apparatus therefor photographic printing apparatus for making copies G03B27/00
• CPC Class Codes: G03F 7/30 Imagewise removal using liquid means
• CPC Class Codes: H01L 21/77 Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate electrically programmable read-only memories or multistep manufacturing processes therefor H10B69/00
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1259 Multistep manufacturing methods
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/1216 the pixel elements being capacitors
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/233 by photolithographic etching

Abstract

The present disclosure provides an active-matrix organic light emitting diode display substrate, a method for fabricating the display substrate and a display device. The active-matrix organic light emitting diode display substrate includes two storage capacitors connected in parallel, an active layer of TFT and an electrode of the new added storage capacitor are formed through a single patterning process, and the electrode is made of conductor material.

Claims

1. A method for fabricating an active-matrix organic light emitting diode display substrate, comprising:

forming a plurality of pixel units;

wherein forming each of the pixel units comprises;

forming a first storage capacitor, a second storage capacitor, a thin film transistor and a light emitting diode, wherein an active layer of the thin film transistor and a first electrode of the first storage capacitor are formed through a single patterning process, the first electrode of the first storage capacitor being made of conductor material,

a second electrode of the first storage capacitor is a drain electrode of the thin film transistor,

a first electrode of the second storage capacitor is the drain electrode of the thin film transistor,

a second electrode of the second storage capacitor is a top electrode of the light emitting diode,

the top electrode of the light emitting diode is electrically connected to the first electrode of the first storage capacitor.

2. The method according to claim 1, wherein forming the active layer of the thin film transistor and the first electrode of the first storage capacitor through the single patterning process comprises:

forming a semiconductor film layer and a conductive film layer successively, and forming the active layer and the first electrode of the first storage capacitor by performing the single patterning process on the semiconductor film layer and the conductive film layer, wherein the active layer is formed from the semiconductor film layer, and the first electrode of the first storage capacitor is formed from the conductive film layer.

3. The method according to claim 2, wherein forming the active layer and the first electrode of the first storage capacitor by performing the single patterning process on the semiconductor film layer and the conductive film layer comprises:

coating a photoresist on the conductive film layer;

exposing the photoresist by using a mask plate with a halftone or gray tone, and developing to form a photoresist fully-reserved region, a photoresist partially-reserved region and a photoresist unreserved region, wherein the photoresist fully-reserved region corresponds to a region where the first electrode of the first storage capacitor is located, the photoresist partially-reserved region corresponds to a region where the active layer is located, and the photoresist unreserved region corresponds to the other region;

removing the conductive film layer and the semiconductor film layer in the photoresist unreserved region;

removing the photoresist in the photoresist partially-reserved region through an ashing process;

removing the conductive film layer in the photoresist partially-reserved region; and

forming the active layer and the first electrode by stripping the remaining photoresist.

4. The method according to claim 1, further comprising:

forming an etch stop layer covering the active layer and the first electrode of the first storage capacitor, wherein the etch stop layer comprises a via hole; and

forming a source electrode and the drain electrode of the thin film transistor on the etch stop layer with the source electrode and the drain electrode in electrical contact with the active layer through the via hole,

wherein there is an overlapping region between an orthographic projection of the drain electrode on a plane where the display substrate is located and an orthographic projection of the first electrode of the first storage capacitor on the plane where the display substrate is located.

5. The method according to claim 1, further comprising:

forming a bottom electrode and the top electrode of the light emitting diode, wherein the bottom electrode is electrically connected with the drain electrode of the thin film transistor.

6. An active-matrix organic light emitting diode display substrate, fabricated by the fabricating method according to claim 1.

7. The active-matrix organic light emitting diode display substrate according to claim 6, wherein there is a pattern of a semiconductor layer under the first electrode of the first storage capacitor, which is the same as a pattern of the first electrode of the first storage capacitor, and the semiconductor layer and the active layer are formed from one film layer.

8. The active-matrix organic light emitting diode display substrate according to claim 7, wherein there is an overlapping region between an orthographic projection of the first electrode of the first storage capacitor on a plane where the display substrate is located and an orthographic projection of the drain electrode of the thin film transistor on the plane where the display substrate is located, and an etch stop layer is between the first electrode of the first storage capacitor and the drain electrode to form the first storage capacitor.

9. The active-matrix organic light emitting diode display substrate according to claim 8, wherein the light emitting diode comprises a bottom electrode and the top electrode, the bottom electrode is electrically connected with the drain electrode, there is an overlapping region between an orthographic projection of the top electrode on the plane where the display substrate is located and an orthographic projection of the drain electrode on the plane where the display substrate is located, and an insulating layer is between the top electrode and the drain electrode to form a second storage capacitor.

10. A display device, comprising the active-matrix organic light emitting diode display substrate according to claim 6.

11. An active-matrix organic light emitting diode AMOLED display substrate, comprising:

a substrate;

a gate electrode of a thin film transistor on the substrate;

a gate insulating layer on the substrate and covering the gate electrode;

an active layer and a semiconductor layer on the gate insulating layer;

a first electrode of a first storage capacitor directly on the semiconductor layer;

an etch stop layer on the gate insulating layer and covering the active layer and the first electrode of the first storage capacitor;

a source electrode and a drain electrode of the thin film transistor on the etch stop layer, the source electrode and the drain electrode of the thin film transistor being in electrical contact with the active layer through a via hole in the etch stop layer; and

a first storage capacitor and a second storage capacitor connected in parallel,

wherein the drain electrode of the thin film transistor is a second electrode of the first storage capacitor and a first electrode of a second storage capacitor, a top electrode of the light emitting diode is a second electrode of the second storage capacitor,

wherein the first electrode of the first storage capacitor and the drain electrode of the thin film transistor partly overlap in a direction perpendicular to the substrate, and the first electrode of the first storage capacitor, the drain electrode of the thin film transistor and the etch stop layer between the first electrode of the first storage capacitor and the drain electrode of the thin film transistor form the first storage capacitor,

the top electrode of the light emitting diode is electrically connected to the first electrode of the first storage capacitor.

12. The active-matrix organic light emitting diode display substrate according to claim 11, wherein there is an overlapping region between an orthographic projection of the first electrode of the first storage capacitor on the substrate and an orthographic projection of the drain electrode of the thin film transistor on the substrate.

13. The active-matrix organic light emitting diode display substrate according to claim 11, further comprising:

a first insulating layer on the etch stop layer and covering the source electrode and the drain electrode of the thin film transistor;

a light emitting diode on the first insulating layer, wherein the light emitting diode comprises a bottom electrode, the top electrode and a light-emitting layer, and the bottom electrode is electrically connected with the drain electrode through the via hole in the first insulating layer; and

a second insulating layer on the first insulating layer and covering the bottom electrode, wherein an opening is in the second insulating layer corresponding to the bottom electrode,

wherein the light-emitting layer is inside the opening, the top electrode is on the second insulating layer and in contact with the light-emitting layer;

the top electrode and the drain electrode partly overlap in a direction perpendicular to the substrate;

the top electrode, the drain electrode, and the first insulating layer as well as the second insulating layer between the top electrode and the drain electrode form the second storage capacitor.

14. The active-matrix organic light emitting diode display substrate according to claim 13, wherein there is an overlapping region between an orthographic projection of the top electrode on the substrate and an orthographic projection of the drain electrode of the thin film transistor on the substrate.

15. The active-matrix organic light emitting diode display substrate according to claim 11, wherein the active layer and the semiconductor layer are directly formed on the gate insulating layer, and the active layer and the semiconductor layer are made of the same material.

16. The active-matrix organic light emitting diode display substrate according to claim 15, wherein the first electrode of the first storage capacitor is made of conductor material.

17. The active-matrix organic light emitting diode display substrate according to claim 15, wherein the first electrode of the first storage capacitor is a metal layer.