Wear-out monitor device

• US 10,365,322 B2
• Filed: 04/18/2017
• Issued: 07/30/2019
• Est. Priority Date: 04/19/2016
• Status: Active Grant

• Current Assignee: Analog Devices International Unlimited Company (Analog Devices, Inc.)
• Original Assignee: Analog Devices Global Unlimited Company (Analog Devices, Inc.)
• Inventors: Coyne, Edward John, O'Donnell, Alan J., Bradley, Shaun, Aherne, David, Boland, David, O'Dwyer, Thomas G., Heffernan, Colm Patrick, Manning, Kevin B., Forde, Mark, Clarke, David J., Looby, Michael A.
• Primary Examiner(s): Hoque, Farhana A
• Application Number:
  US15/490,584
• Publication Number:
  US 20170299650A1
• Time in Patent Office: 833 Days
• Field of Search: 32476201, 438 14, 361 18
• CPC Class Codes: G01N 27/041 of a solid body
• CPC Class Codes: G01R 31/2874 related to temperature
• CPC Class Codes: G01R 31/2879 related to electrical aspects, e.g. to voltage or current supply or stimuli or to electrical loads

Abstract

The disclosed technology generally relates to integrated circuit devices with wear out monitoring capability. An integrated circuit device includes a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device, wherein the indication is associated with localized diffusion of a diffusant within the wear-out monitor device in response to a wear-out stress that causes the wear-out of the core circuit.

Claims

1. An integrated circuit device comprising a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device, the wear-out monitor device comprising a reservoir and a diffusion region, wherein the indication is associated with localized diffusion of a diffusant from the reservoir into the diffusion region in response to a wear-out stress that causes the wear-out of the core circuit.

2. The integrated circuit device of claim 1, wherein the reservoir is formed at a surface of a substrate, wherein the reservoir serves as a first electrode of the wear-out monitor device, and wherein the wear-out monitor device further comprises a second electrode formed at the surface and formed of a material different from the reservoir.

3. The integrated circuit device of claim 1, wherein the diffusant has a diffusion activation energy between 0.75 eV and 2.5 eV.

4. The integrated circuit device of claim 1, wherein the diffusant includes one or more elements selected from the group consisting of aluminum (Al), cobalt (Co), platinum (Pt), sulfur (S), nickel (Ni), silver (Ag), zinc (Zn), gold (Au), chromium (Cr), copper (Cu), iron (Fe), sodium (Na), and potassium (K).

5. The integrated circuit device of claim 1, further comprising a sensing circuit electrically connected to the wear-out monitor device and configured to detect an electrical property that changes in response to the localized diffusion of the diffusant.

6. The integrated circuit device of claim 1, further comprising a control circuit configured to apply a stimulus to activate the wear-out monitor prior to recording the indication of wear-out.

7. The integrated circuit device of claim 6, further comprising a physical barrier having an energy barrier for diffusion of the diffusant disposed between the reservoir and the diffusion region, wherein the physical barrier is configured such that the energy barrier is reduced in response to the stimulus to activate the wear-out monitor device.

8. The integrated circuit device of claim 1, wherein the wear-out monitor device comprises a plurality of monitor structures each configured to record an indication of wear-out of the core circuit.

9. The integrated circuit device of claim 8, wherein different ones of the monitor structures are configured to be activated by different stimuli prior to recording indications of wear-out of the core circuit.

10. The integrated circuit device of claim 1, wherein atoms of a substrate serve as the diffusant, such that the wear-out stress causes atoms of the substrate to diffuse from the substrate into a diffusion region in response to the wear-out stress.

11. The integrated circuit device of claim 1, wherein the wear-out monitor device is configured to apply an electric field to a diffusion region in a first direction, and wherein the diffusant has a charge state when diffused in the diffusion region such that, when the electric field is applied to the diffusion region having the diffusant diffused therein, the electric field causes the diffusant to further diffuse in the diffusion region in the first direction.

12. The integrated circuit device of claim 11, wherein the diffusion region and the reservoir are adjacently disposed in a second direction different than the first direction and configured such that the wear-out stress causes the diffusant to diffuse in the second direction.

13. The integrated circuit device of claim 12, wherein a plurality of conductive structures are formed on a surface of the diffusion region along the first direction and provide electrical access to the diffusion region at a plurality of locations.

14. The integrated circuit device of claim 1, wherein the wear-out monitor device is configured such that the wear-out stress causes the diffusant to diffuse away from the reservoir and into the diffusion region, wherein the diffusant has a charge state when diffused into the diffusion region, and wherein the wear-out monitor device is further configured to apply an electric field to the diffusion region such that, when the electric field is applied to the diffusion region having the diffusant diffused therein, the electric field causes the diffusant to diffuse toward the reservoir.

15. The integrated circuit device of claim 14, wherein the wear-out monitor device is configured to apply the electric field having a magnitude such that, when the electric field is applied to the diffusion region having the diffusant diffused therein, the electric field causes the diffusant to diffuse in a direction of increasing concentration gradient.

16. The integrated circuit device of claim 1, wherein the wear-out monitor device comprises a PN junction, and wherein the reservoir contacts one of a p-doped region or an n-doped region of the PN junction.

17. The integrated circuit device of claim 16, wherein the reservoir serves as an electrical contact for the one of the p-doped region or the n-doped region of the PN junction.

27. The integrated circuit device of claim 1, wherein the wear-out monitor device comprises a semiconductor substrate.

28. The integrated circuit device of claim 1, wherein the wear-out monitor device comprises an insulating substrate.

29. The integrated circuit device of claim 1, wherein the wear-out monitor device and the core circuit are integrated in a common substrate.

30. The integrated circuit device of claim 1, wherein the diffusant has a diffusion activation energy less than 3.0 eV.

18. A method of monitoring wear-out of a core circuit of an integrated circuit device using a wear-out monitor device separated from the core circuit, the wear-out monitor device comprising a reservoir and a diffusion region, the method comprising:

recording an indication of wear-out of the core circuit, wherein the indication is associated with localized diffusion of a diffusant from the reservoir into the diffusion region within the wear-out monitor device in response to a wear-out stress that causes the wear-out of the core circuit;

detecting a property that changes in response to the localized diffusion of the diffusant; and

reporting the property of the wear-out monitor device.

19. The method of claim 18, further comprising, prior to the recording, activating the wear-out monitor device by applying a stimulus to overcome an energy barrier.

20. The method of claim 18, further comprising applying an electric field to a diffusion region having the diffusant diffused therein to change a direction of diffusion of the diffusant in the diffusion region.

21. The method of claim 18, further comprising, prior to recording, subjecting the wear-out monitor device to the wear-out stress that causes the localized diffusion of the diffusant from the reservoir into the diffusion region.

22. The method of claim 21, further comprising, prior to subjecting the wear-out monitor device to the wear-out stress, activating the monitor device by applying a stimulus to overcome an energy barrier.

23. The method of claim 22, wherein applying the stimulus alters a physical barrier having the energy barrier and reduces the energy barrier.

24. The method of claim 21, further comprising, after subjecting the wear-out monitor device to the wear-out stress, applying an electric field to the diffusion region having the diffusant diffused therein in a first direction such that the electric field causes the diffusant to further diffuse in the first direction.

25. The method of claim 21, further comprising, after subjecting the wear-out monitor device to the wear-out stress which causes the diffusant to diffuse away from the reservoir and into the diffusion region, applying an electric field to the diffusion region having the diffusant diffused therein, such that the electric field causes the diffusant to diffuse toward the reservoir.

26. An integrated circuit device with wear-out monitoring of a core circuit in the integrated circuit device, the integrated circuit device comprising:

means for recording an indication of wear-out of a core circuit, the core circuit separated from the means for recording, the means for recording comprising a reservoir and a diffusion region, wherein the indication is associated with localized diffusion of a diffusant from the reservoir into the diffusion region within the means for recording in response to a wear-out stress that causes the wear-out of the core circuit; and

means for detecting the indication of wear-out of the core circuit, the means for detecting the indication of wear-out being in communication with the means for recording the indication of wear-out.

31. The integrated circuit device of claim 26, wherein the means for recording is configured to be activated in response to a stimulus prior to causing the diffusant to diffuse from the reservoir into the diffusion region.

32. The integrated circuit device of claim 26, further comprising means for applying an electric field to the diffusion region in a first direction, and wherein the diffusant has a charge state when diffused in the diffusing region such that, when the electric field is applied to the diffusing region, the electric field causes the diffusant to further diffuse in the diffusing region in the first direction.

33. The integrated circuit device of claim 26, wherein the means for recording is configured such that the wear-out stress causes the diffusant to diffuse away from the reservoir and into the diffusion region, wherein the diffusant has a charge state when diffused into the diffusion region, and wherein the recording means is further configured to apply an electric field to the diffusion region such that, when the electric field is applied to the diffusion region, the electric field causes the diffusant to diffuse toward the reservoir.

34. The integrated circuit device of claim 26, wherein the reservoir is formed at a surface of a substrate, wherein the reservoir serves as a first electrode of the means for recording the indication of wear-out, and wherein the means for recording the indication of wear-out further comprises a second electrode formed at the surface and formed of a material different from the reservoir.

35. The integrated circuit device of claim 26, wherein the diffusant has a diffusion activation energy between 0.75 eV and 2.5 eV.

36. The integrated circuit device of claim 26, wherein atoms of a substrate serve as the diffusant, such that the wear-out stress causes atoms of the substrate to diffuse from the substrate into a diffusion region in response to the wear-out stress.

37. An integrated circuit device comprising a wear-out monitor device configured to record an indication of wear-out of a core circuit separated from the wear-out monitor device based on diffusion of a charged diffusant, wherein the wear-out monitor device comprises:

a reservoir comprising the charged diffusant; and

a diffusion region in communication with the reservoir such that the wear-out stress causes the charged diffusant to diffuse from the reservoir into the diffusion region.

38. The integrated circuit device of claim 37, wherein the wear-out monitor device is configured to apply an electric field to the charged diffusant.

39. The integrated circuit device of claim 38, wherein the wear-out monitor device is configured to cause a change in a direction of diffusion of the charged diffusant by applying the electric field.

40. The integrated circuit device of claim 38, wherein the charged diffusant has a charge sign and the direction of the electric field is such that, upon application of the electric field, the charged diffusant diffuses in a direction of increasing concentration gradient of the charged diffusant.

41. The integrated circuit device of claim 38, wherein the wear-out monitor device comprises a PN junction and is configured to record the indication of wear-out based on localized diffusion of the charged diffusant in the PN junction.

42. The integrated circuit device of claim 38, wherein the wear-out monitor device further comprises a plurality of electrodes positioned at different distances from the reservoir, wherein the electrodes are configured to apply the electric field.

43. The integrated circuit device of claim 37, wherein the wear-out monitor device is configured to initiate the diffusion of the charged diffusant upon activation by a stimulus prior to recording the indication of wear-out.