Hydrophilic photoresist, patterning method of quantum dot layer and quantum dot light-emitting diode

• US 10,386,724 B2
• Filed: 09/29/2015
• Issued: 08/20/2019
• Est. Priority Date: 06/16/2015
• Status: Active Grant

• Current Assignee: BOE Technology Group Co., Ltd.
• Original Assignee: BOE Technology Group Co., Ltd.
• Inventors: Zhang, Bin, Zhou, Tingting, Zhang, Feng, Zhang, Wei, Gao, Jincheng
• Primary Examiner(s): Chacko-Davis, Daborah
• Application Number:
  US15/313,910
• Publication Number:
  US 20170176863A1
• Time in Patent Office: 1,421 Days
• Field of Search: 430327, 430331, 430329, 430330
• CPC Class Codes: G03F 7/038 Macromolecular compounds which are rendered insoluble or differentially wettable G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021
• CPC Class Codes: G03F 7/039 Macromolecular compounds which are photodegradable, e.g. positive electron resists G03F7/075 takes precedence; macromolecular quinonediazides G03F7/023
• CPC Class Codes: G03F 7/16 Coating processes; Apparatus therefor applying coatings to base materials in general B05; applying photosensitive compositions to base for photographic purposes G03C1/74
• CPC Class Codes: G03F 7/20 Exposure; Apparatus therefor photographic printing apparatus for making copies G03B27/00
• CPC Class Codes: G03F 7/26 Processing photosensitive materials; Apparatus therefor G03F7/12 - G03F7/24 take precedence
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking
• CPC Class Codes: G03F 7/405 Treatment with inorganic or organometallic reagents after imagewise removal
• CPC Class Codes: H01L 33/0062 for devices with an active region comprising only III-V compounds
• CPC Class Codes: H01L 33/0083 for devices with an active region comprising only II-VI compounds
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/28 containing only elements of Group II and Group VI of the Periodic Table
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H10K 50/115 comprising active inorganic nanostructures, e.g. luminescent quantum dots
• CPC Class Codes: H10K 71/233 by photolithographic etching

Abstract

A photoresist, a patterning method of a quantum dot layer, a QLED, a quantum dot color filter and a display device are disclosed, which can solve the problem that current patterning methods destroy quantum dots. The patterning method of a quantum dot layer includes the steps of: forming a hydrophilic photoresist pattern which comprises forming a photoresist material layer on a substrate by using a photoresist, patterning the photoresist material layer to form a photoresist pattern, and subjecting the photoresist to hydrophilic treatment; applying quantum dots; removing the quantum dots retained on the photoresist pattern; and stripping the photoresist pattern. The patterning method of a quantum dot layer in the present disclosure can improve the hydrophilic performance of the photoresist and reduce the adhesion of the lipophilic quantum dots on the photoresist.

Claims

1. A method for patterning a quantum dot layer onto a substrate, comprising:

forming a hydrophilic photoresist pattern, comprising;

forming a photoresist material layer on the substrate by using a photoresist which comprises a phenolic resin,

patterning the photoresist material layer to form a photoresist pattern, and

subjecting the photoresist to a hydrophilic treatment by contacting the photoresist with a hydrophilic dialdehyde which has a formula of;

2. The method for patterning the quantum dot layer according to claim 1, wherein the subjecting the photoresist to the hydrophilic treatment is carried out prior to the forming the photoresist material layer, the forming the hydrophilic photoresist pattern further comprising:

mixing the photoresist with the hydrophilic dialdehyde to obtain a hydrophilic photoresist containing the hydrophilic group,

wherein the forming the photoresist material layer on the substrate comprises forming a hydrophilic photoresist material layer on the substrate, and

wherein the patterning the photoresist material layer to form the photoresist pattern comprises patterning the hydrophilic photoresist material layer to form the photoresist pattern.

3. The method for patterning the quantum dot layer according to claim 2, wherein a content of the hydrophilic dialdehyde in the hydrophilic photoresist is from about 1 wt % to about 20 wt %.

4. The method for patterning the quantum dot layer according to claim 1, wherein the subjecting the photoresist to the hydrophilic treatment is carried out after the forming the photoresist material layer, the subjecting the photoresist to the hydrophilic treatment comprising:

preparing an aqueous solution of hydrophilic dialdehyde containing an acid;

soaking the substrate on which the photoresist material layer is formed in the aqueous solution; and

heating the substrate to form the hydrophilic group on a surface of the photoresist material layer.

5. The method for patterning the quantum dot layer according to claim 4, wherein the acid is selected from the group consisting of an oxalic acid, a maleic acid, a maleic acid anhydride, an acetic acid, a trichloroacetic acid, a benzenesulfonic acid, a tartaric acid, a citric acid, and a racemic malic acid.

6. The method for patterning the quantum dot layer according to claim 4, wherein the aqueous solution of the hydrophilic dialdehyde has a mass concentration of from about 3 wt % to about 20 wt %, and a pH of from about 2 to about 5.5.

7. The method for patterning the quantum dot layer according to claim 4, wherein the soaking the substrate comprises soaking the substrate for about 5 min to about 30 min.

8. The method for patterning the quantum dot layer according to claim 4, wherein the heating the substrate comprises:

heating at a temperature of about 90°

C. to about 160°

C. for about 5 min to about 60 min.

9. The method for patterning the quantum dot layer according to claim 1, wherein the method further comprises treating the substrate with a silane coupling agent prior to formation of the photoresist material layer.

10. The method for patterning the quantum dot layer according to claim 1, wherein the photoresist pattern precisely exposes a region required to be coated with quantum dots on the substrate.