Optical addressing of individual targets in solids
First Claim
1. A solid state quantum device comprising:
- a semiconductor substrate;
one or more waveguides integrated into the semiconductor substrate;
one or more atomic scale impurities located within a select waveguide of the one or more waveguides and being optically coupled to the select waveguide;
a laser light source coupled to the one or more waveguides so that laser light is selectively focussed on the one or more of the atomic scale impurities to cause selective photoionization of one or more of the atomic scale impurities; and
one or more charge sensors with sub-electron charge sensitivity integrated into the select waveguide and arranged to measure a charge variation in a region of the select waveguide that contains the one or more atomic scale impurities that have been photoionized;
wherein, in use, the device operates such that the laser light is turned on to cause photoionization of one or more of the atomic scale impurities, and the one or more charge sensors detect the charge variation in the region of the semiconductor substrate that contains the one or more atomic scale impurities that have been photoionized to perform optical single-shot readout of the electron and nuclear spin of the impurity.
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Abstract
This disclosure concerns photonics and in particular the addressing of individual targets in solids. In aspect one there is provided a device comprising a solid substrate with one or more atomic scale targets in the substrate. A laser light is focused on a region of the substrate that contains a single target to selectively cause photoionization of the target. A charge sensor with sub-electron charge sensitivity is focussed on measuring the charge in the region of the substrate that contains a single target. In use, the device operates such that the laser is turned on to cause photoionization of the target, and the charge sensor detects the change in charge in the region of the substrate that contains the single target. In another aspect is the method for optically investigating individual nuclear spin states of single atoms by investigating both the Zeeman effect and the hyperfine interaction of the single atoms.
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Citations
11 Claims
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1. A solid state quantum device comprising:
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a semiconductor substrate; one or more waveguides integrated into the semiconductor substrate; one or more atomic scale impurities located within a select waveguide of the one or more waveguides and being optically coupled to the select waveguide; a laser light source coupled to the one or more waveguides so that laser light is selectively focussed on the one or more of the atomic scale impurities to cause selective photoionization of one or more of the atomic scale impurities; and one or more charge sensors with sub-electron charge sensitivity integrated into the select waveguide and arranged to measure a charge variation in a region of the select waveguide that contains the one or more atomic scale impurities that have been photoionized; wherein, in use, the device operates such that the laser light is turned on to cause photoionization of one or more of the atomic scale impurities, and the one or more charge sensors detect the charge variation in the region of the semiconductor substrate that contains the one or more atomic scale impurities that have been photoionized to perform optical single-shot readout of the electron and nuclear spin of the impurity. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for operating a solid state quantum device, the method comprising:
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coupling one or more waveguides integrated into a semiconductor substrate to one or more atomic scale impurities, the one or more atomic scale impurities being located within a select waveguide of the one or more waveguides; causing selective photoionization of the one or more of the atomic scale impurities by coupling a laser light source to the one or more waveguides so that laser light is selectively focussed on the one or more of the atomic scale impurities; detecting a charge variation in a region of the semiconductor substrate that contains the scale impurities that have been photoionized by using one or more charge sensors with sub-electron charge sensitivity integrated into the select waveguide and arranged to measure a charge variation in a region of the select waveguide that contains the one or more atomic scale impurities that have been photoionized to perform optical single-shot readout of the electron and nuclear spin of the one or more atomic scale impurities that have been photoionized.
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Specification