Semiconductor device

  • US 10,424,582 B2
  • Filed: 07/03/2018
  • Issued: 09/24/2019
  • Est. Priority Date: 02/19/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising a circuit, the circuit comprising:

  • a first transistor comprising;

    a first semiconductor layer;

    a first gate insulating layer over the first semiconductor layer; and

    a first gate electrode over the first gate insulating layer;

    an insulating layer over the first semiconductor layer;

    a second transistor comprising;

    a second gate electrode;

    a second gate insulating layer over the second gate electrode, the second gate insulating layer comprising part of the insulating layer;

    a second semiconductor layer over the second gate insulating layer; and

    a third gate electrode over the second semiconductor layer;

    a capacitor comprising;

    a first electrode; and

    a second electrode over the first electrode,wherein the first semiconductor layer comprises silicon,wherein the second semiconductor layer comprises an oxide semiconductor,wherein the first electrode comprises silicon,wherein the second gate electrode is over and in contact with the first gate insulating layer,wherein the second electrode is electrically connected to the first gate electrode, andwherein the first gate electrode is electrically connected to one of a source and a drain of the second transistor.

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