Method and system for high-throughput defect inspection using the contrast in the reduced spatial frequency domain

• US 10,444,623 B2
• Filed: 02/02/2017
• Issued: 10/15/2019
• Est. Priority Date: 02/22/2016
• Status: Active Grant

• Current Assignee: Paul Scherrer-Institut (Schweizerische Eidgenossenschaft)
• Original Assignee: Paul Scherrer-Institut (Schweizerische Eidgenossenschaft)
• Inventors: Ekinci, Yasin
• Primary Examiner(s): Rahman, Md M
• Application Number:
  US16/078,189
• Publication Number:
  US 20190056655A1
• Time in Patent Office: 985 Days
• Field of Search: 3562375
• CPC Class Codes: G01N 21/95607 using a comparative method
• CPC Class Codes: G03F 1/84 Inspecting

Abstract

Methods and a system for scanning scattering contrast inspection for the identification of defects in an actual pattern block on a sample as compared to a desired pattern block. Most of the information in the reciprocal space (spatial frequency domain) is omitted in order to increase the throughput. That information in the reciprocal space is captured which gives the highest defect information, namely contrast signal between the defective and defect-free structure. Deviations from the expected diffraction pattern allow rapid identification of defects on the actual pattern. The first method learns the correct reconstructed diffraction image by comparing the repetitive pattern blocks. The second method focuses on the appearance of predictable defects in the spatial frequency domain of the reconstructed diffraction image thereby defining regions of interest where the defects materialize. Only the regions of interest are considered and compared to the reconstruction diffraction image of a defect-free pattern block.

Claims

1. A method for scanning scattering contrast inspection for the identification of defects in an actual pattern block on a sample as compared to a desired pattern block on the sample, the method comprising the steps of:

a) providing the sample with the actual pattern block, the pattern including absorbing and/or phase-shifting materials, and the sample having repetitions of said pattern block;

b) providing a light source for generating a light beam for scanning the sample in transmission mode or reflection mode;

c) illuminating the sample with the light beam and diffracting the light beam according to the actual pattern present on the sample to form a diffracted light beam;

d) detecting the diffracted light beam in terms of position related intensities with a position sensitive detector;

e) analyzing detected intensities, and thereby obtaining a diffraction image that is responsive to the actual pattern block on the sample;

f) repeatedly comparing diffraction images with previously obtained diffraction images thereby determining a trustworthy diffraction image when a first predetermined number of diffraction images out of a second predetermined number of diffraction images are identical, and marking all diffraction images deviating from the trustworthy diffraction image as being related to a pattern block potentially having a defect; and

g) identifying the position of the pattern block potentially having a defect for further inspection of the position on the sample.

2. The method according to claim 1, wherein the illuminating step comprises illuminating the sample with the light beam at an angle of 0 to 80°

relative to a surface normal of the sample.

3. The method according to claim 1, which comprises calculating a predicted diffraction image of the desired pattern block and comparing the trustworthy diffraction image with the predicted diffraction image and, in case of congruency, authorizing for the identification of obtained diffraction images deviating from the trustworthy diffraction image.

4. The method according to claim 3, which comprises calculating the predicted diffraction image using Fourier or Fresnel calculations.

5. The method according to claim 1, wherein the light source is configured to provide radiation selected from the group consisting of visible light, UV light, DUV light, EUV light, soft X-rays, and hard X-rays.

6. The method according to claim 1, wherein the actual pattern block is a structure of an electronic circuitry in a semiconductor chip.

7. The method according to claim 1, wherein the desired pattern block is an engineered pattern block on the sample.

8. The method according to claim 1, which comprises analyzing the detected intensities and reconstructing an aereal image of the sample using iterative reconstruction algorithms.

9. The method according to claim 8, wherein the iterative reconstruction algorithms are a ptychographic algorithm or a priori knowledge of the sample.

10. A system for scanning scattering contrast inspection for identifying defects in an actual pattern of a sample as compared to a desired pattern of the sample, the system comprising:

a sample holder for holding the sample having the actual pattern, said pattern comprising absorbing and or phase-shifting materials and the sample carrying periodic repetitions of a pattern block;

a light source for generating a light beam for scanning the sample in transmission mode or reflection mode by illuminating the sample with the light beam;

a position sensitive detector for detecting a diffracted light beam in terms of position related intensities thereof;

a computing device connected to said detector, said computing device being configured;

to process data for analyzing the intensities detected by said detector and to obtain a diffraction image responsive to the actual pattern block on the sample;

to calculate a predicted diffraction image of the desired pattern;

to repeatedly compare the diffraction images with previously obtained diffraction images thereby determining a trustworthy diffraction image when a first predetermined number of diffraction images out of a second predetermined number of diffraction images are identical, and to mark all diffraction images deviating from the trustworthy diffraction image as being related to a pattern block potentially comprising a defect; and

to identify a position of the pattern block potentially comprising a defect for further inspection of the position on the sample.

11. The system according to claim 10, wherein said light source is configured for illuminating the sample with the light beam at an angle of 0 to 80°

relative to a surface normal of the sample.

12. The system according to claim 10, wherein said computing device is configured for calculating the predicted diffraction image using Fourier or Fresnel calculations.

13. The system according to claim 10, wherein said computing device is further configured for calculating a predicted diffraction image of the desired pattern block, wherein the trustworthy diffraction image is compared to the predicted diffraction image and, in case of congruency, is authorized for the identification of diffraction images deviating from the trustworthy diffraction image.

14. The system according to claim 10, wherein said light source is configured to provide light radiation selected from the group consisting of visible light, UV light, DUV light, EUV light, soft X-rays, and hard X-rays.

15. The system according to claim 10, wherein the detected intensities are analyzed using a ptychographic algorithm.

16. A method for scanning scattering contrast inspection for identifying defects in an actual pattern block on a sample as compared to a desired pattern block on the sample, the method comprising:

a) providing the sample with the actual pattern block, the pattern having absorbing and/or phase-shifting materials and the sample carrying periodic repetitions of the pattern block;

b) providing a defect library with a number of possible defects that may occur for the pattern block and calculating a diffraction image for each possible defect to thereby determine regions of interest in the reconstructed diffraction image which deviate from a reconstructed diffraction image for a defect-free desired pattern block;

c) providing a light source for generating a light beam for scanning the sample in transmission mode or reflection mode;

d) illuminating the sample with the light beam, thereby diffracting the light beam according to the actual pattern present on the sample;

e) detecting the diffracted light beam in terms of position related intensities thereof with a position sensitive detector;

f) analyzing the detected intensities, and thereby obtaining a reconstructed diffraction image responsive to the actual pattern block on the sample and comparing the reconstructed diffraction image only in the predetermined regions of interest thereby identifying pattern blocks potentially comprising a defect; and

g) identifying a position of the pattern block that potentially comprises a defect for further inspection of the position thereof on the sample.

17. The method according to claim 16, wherein the illuminating step comprises illuminating the sample with the light beam at an angle of 0 to 45°

relative to a surface normal of the sample.