Endpoint detection algorithm for atomic layer etching (ALE)

  • US 10,453,653 B2
  • Filed: 03/08/2017
  • Issued: 10/22/2019
  • Est. Priority Date: 09/02/2016
  • Status: Active Grant
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First Claim
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1. A method for determining process endpoint data in a plasma processing system, comprising:

  • receiving optical emission spectroscopy (OES) data from a plasma processing chamber of the plasma processing system that performs a multi-step plasma process of a substrate that is an atomic layer etch (ALE) process, wherein the multi-step plasma process is cyclical and comprises at least two process steps that are cyclically repeated, and the at least two process steps comprise an absorption step and a desorption step;

    determining a first quiescent portion of the received OES data, the first quiescent portion is an average of the absorption step of the ALE process;

    determining a second quiescent portion of the received OES data, the second quiescent portion is an average of a desorption step of the ALE process; and

    determining a first endpoint of the determined first quiescent portion.

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