Semiconductor device and manufacturing method thereof

  • US 10,461,101 B2
  • Filed: 05/02/2017
  • Issued: 10/29/2019
  • Est. Priority Date: 12/28/2012
  • Status: Active Grant
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First Claim
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1. A semiconductor device comprising:

  • an oxide semiconductor layer over a first insulating film;

    the oxide semiconductor layer comprising a first region and a second region;

    a transistor over an insulating surface, the transistor including;

    a source electrode layer and a drain electrode layer;

    a second insulating film over the first region; and

    a gate electrode layer over the first region with the second insulating film therebetween;

    a transparent conductive film overlapping with the second region;

    a dielectric between the second region and the transparent conductive film; and

    a capacitor comprisingthe second region;

    the transparent conductive film; and

    the dielectric serving as a dielectric of the capacitor,wherein the dielectric is in direct contact with a side edge surface of the second insulating film, a first electrode of the capacitor, and a second electrode of the capacitor.

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