Semiconductor structure and method for manufacturing semiconductor structure
First Claim
1. A method for manufacturing semiconductor structure, comprising:
- (a) adhering a first carrier to a first surface of a wafer by a first temporary bonding layer;
(b) etching a second surface of the wafer facing away from the first carrier to form at least one through hole and at least one trench, wherein a conductive pad of the wafer is exposed through the through hole;
(c) forming an isolation layer on the second surface of the wafer, a sidewall of the through hole, and a sidewall of the trench;
(d) forming a redistribution layer on the isolation layer and the conductive pad;
(e) adhering a second carrier to the second surface of the wafer by a second temporary bonding layer, wherein the through hole and the trench are covered by the second carrier;
(f) removing the first carrier and the first temporary bonding layer;
(g) disposing an optical element that has a dam element on the first surface of the wafer;
(h) removing the second carrier and the second temporary bonding layer after the optical element is disposed on the first surface of the wafer; and
(i) forming an insulating layer that covers the redistribution layer, the through hole, and the trench after the second carrier and the second temporary bonding layer are removed.
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Accused Products
Abstract
A method for manufacturing a semiconductor structure includes the following steps. A first carrier is adhered to a first surface of a wafer by a first temporary bonding layer. A second surface of the wafer facing away from the first carrier is etched to form at least one through hole and at least one trench, in which a conductive pad of the wafer is exposed through the through hole. An isolation layer is formed on the second surface of the wafer, a sidewall of the through hole, and a sidewall of the trench. A second carrier is adhered to the second surface of the wafer by a second temporary bonding layer, and thus the through hole and the trench are covered by the second carrier. The first carrier and the first temporary bonding layer are removed.
25 Citations
15 Claims
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1. A method for manufacturing semiconductor structure, comprising:
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(a) adhering a first carrier to a first surface of a wafer by a first temporary bonding layer; (b) etching a second surface of the wafer facing away from the first carrier to form at least one through hole and at least one trench, wherein a conductive pad of the wafer is exposed through the through hole; (c) forming an isolation layer on the second surface of the wafer, a sidewall of the through hole, and a sidewall of the trench; (d) forming a redistribution layer on the isolation layer and the conductive pad; (e) adhering a second carrier to the second surface of the wafer by a second temporary bonding layer, wherein the through hole and the trench are covered by the second carrier; (f) removing the first carrier and the first temporary bonding layer; (g) disposing an optical element that has a dam element on the first surface of the wafer; (h) removing the second carrier and the second temporary bonding layer after the optical element is disposed on the first surface of the wafer; and (i) forming an insulating layer that covers the redistribution layer, the through hole, and the trench after the second carrier and the second temporary bonding layer are removed. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification