Semiconductor substrate and manufacturing method thereof
First Claim
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1. A semiconductor substrate, comprising:
- an epitaxy region, located at a central portion of a main plane of the semiconductor substrate;
a periphery region, surrounding the epitaxy region; and
an injured region, distributed inside the periphery region;
wherein the semiconductor substrate is a Si-substrate, an average depth of the injured region is from 17.5 μ
m to 26.5 μ
m, and the injured region is a lattice strain region, andwherein the main plane of the semiconductor substrate is surrounded by a bevel portion which is manufactured by a deformation process, the bevel portion is located in the periphery region, and the injured region is located in the bevel portion.
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Abstract
A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate has an epitaxy region located at a central portion of a main plane of the semiconductor substrate, a periphery region surrounding the epitaxy region and an injured region distributed inside the periphery region.
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Citations
4 Claims
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1. A semiconductor substrate, comprising:
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an epitaxy region, located at a central portion of a main plane of the semiconductor substrate; a periphery region, surrounding the epitaxy region; and an injured region, distributed inside the periphery region; wherein the semiconductor substrate is a Si-substrate, an average depth of the injured region is from 17.5 μ
m to 26.5 μ
m, and the injured region is a lattice strain region, andwherein the main plane of the semiconductor substrate is surrounded by a bevel portion which is manufactured by a deformation process, the bevel portion is located in the periphery region, and the injured region is located in the bevel portion. - View Dependent Claims (2, 3)
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4. A manufacturing method of a semiconductor substrate, comprising:
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providing a semiconductor substrate; and forming an injured region inside a periphery region of the semiconductor substrate, wherein an average depth of the injured region is from 17.5 μ
m to 26.5 μ
m and the injured region is a lattice strain region, wherein a bevel portion manufactured by a deformation process is located in the periphery region, and the injured region is located in the bevel portion, and the step of forming the injured region comprises;performing a sandblasting process or a stealth laser process to form the injured region inside the periphery region.
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Specification