Method for producing stacked electrode and method for producing photoelectric conversion device

• US 10,483,104 B2
• Filed: 10/05/2015
• Issued: 11/19/2019
• Est. Priority Date: 03/30/2012
• Status: Active Grant

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Naito, Katsuyuki, Tsutsumi, Eishi, Yoshinaga, Norihiro, Akasaka, Yoshihiro
• Primary Examiner(s): Diaz, Jose R
• Application Number:
  US14/874,569
• Publication Number:
  US 20160027935A1
• Time in Patent Office: 1,506 Days
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: C23C 16/06 characterised by the deposition of metallic material
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: H01L 21/02603 Nanowires
• CPC Class Codes: H01L 29/413 Nanosized electrodes, e.g. nanowire electrodes comprising one or a plurality of nanowires nanosized carbon materials, e.g. carbon nanotubes, per se C01B32/15; transparent electrodes comprising carbon nano-tubes H10K30/821, nanotechnology per se B82B
• CPC Class Codes: H01L 31/022466 made of transparent conductive layers, e.g. TCO, ITO layers
• CPC Class Codes: H01L 31/0749 including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
• CPC Class Codes: H01L 31/1884 Manufacture of transparent electrodes, e.g. TCO, ITO
• CPC Class Codes: H10K 30/82 Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
• CPC Class Codes: H10K 85/20 Carbon compounds, e.g. carbon nanotubes or fullerenes
• CPC Class Codes: Y02E 10/541 CuInSe2 material PV cells
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product
• CPC Class Codes: Y10S 977/755 Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less

Abstract

A method for producing a stacked electrode of an embodiment includes preparing a multi-layered graphene film, applying a dispersion liquid of metal nanowires onto the multi-layered graphene film, and removing a solvent from the dispersion liquid to prepare a metal wiring on the multi-layered graphene film.

Claims

1. A method for producing a stacked electrode, comprising:

preparing a multi-layered graphene film directly on an insulating substrate;

applying a dispersion liquid of metal nanowires directly onto the multi-layered graphene film;

removing a solvent from the dispersion liquid to prepare a metal wiring on the multi-layered graphene film;

pressing the metal wiring to prepare a metal wiring on the multi-layered graphene filing and to strengthen the connection between the multi-layered graphene film and the metal nanowires;

forming a polymer directly on the multi-layered graphene film and the metal wiring to fill asperities of the metal nanowires, wherein the polymer covers the multi-layered graphene film and the metal wiring to obtain a stacked member including the insulating substrate, the multi-layered graphene film, the metal wire, and the polymer; and

cleaving a side of the stacked member where the multi-layered graphene and the insulating substrate are in direct contact and obtaining the stacked electrode including the multi-layered graphene film, the metal wire, and the polymer.

2. The method according to claim 1, wherein the metal nanowires contain silver, gold, or copper.

3. The method according to claim 1, wherein a thickness of the multi-layered graphene film is between 0.6 nm and 0.5 nm.

4. The method according to claim 1, wherein the preparing of the multi-layered graphene film includes partially substituting carbon atoms of the multi-layered graphene film with nitrogen or boron.

5. The method according to claim 1, wherein the preparing of the multi-layered graphene film includes applying a graphene oxide and reducing the graphene oxide to prepare the multi-layered graphene film on the insulating substrate.

6. The method according to claim 1, wherein the preparing of the multi-layered graphene film includes transferring a graphene formed by a CVD process to prepare the multi-layered graphene film.

7. The method according to claim 1, wherein the polymer is a conductive polymer.

8. The method according to claim 1, wherein the polymer contains a graphene oxide.

9. The method according to claim 1, wherein the polymer is a near-infrared transmission polymer.

10. The method according to claim 1, wherein the insulating substrate is a polymer substrate, a resin substrate or glass.

11. The method according to claim 1, wherein the insulating substrate is a polymer substrate or a resin substrate.

12. The method according to claim 1, wherein the metal wiring formed from the dispersion liquid of the metal nanowires is a plurality of patterned strips, and

each of the patterned strips includes the metal nanowires.

13. The method according to claim 1, wherein the metal nanowires are randomly oriented, and

the randomly oriented metal nanowires have a mesh structure.

14. The method according to claim 1, wherein the stacked electrode consists of the multi-layered graphene film, the metal wire, and the polymer.

15. A method for producing a photoelectric conversion device including, as constituents, a stacked electrode, a counter electrode facing the stacked electrode, and a photoelectric conversion layer interposed between the stacked electrode and the counter electrode, wherein

a method for producing the stacked electrode is the method for producing a stacked electrode comprising:

preparing a multi-layered graphene film directly on an insulating substrate;

applying a dispersion liquid of metal nanowires directly onto the multi-layered graphene film;

removing a solvent from the dispersion liquid to prepare a metal wiring on the multi-layered graphene film;

pressing the metal wiring to prepare a metal wiring on the multi-layered graphene film and to strengthen the connection between the multi-layered graphene film and the metal nanowires;

forming a polymer directly on the multi-layered graphene film and the metal wiring to fill asperities of the metal nanowires, wherein the polymer covers the multi-layered graphene film and the metal wiring to obtain a stacked member including the insulating substrate, the multi-layered graphene film, the metal wire, and the polymer, the multi-layered graphene being disposed between the insulating substrate and the metal wiring; and

cleaving a side where the multi-layered graphene and the insulating substrate are in direct contact and obtaining the stacked electrode including the multi-layered graphene film, the metal wire, and the polymer.

16. The method according to claim 15, wherein the photoelectric conversion layer is produced by coating.

17. The method according to claim 15, wherein the stacked electrode is pasted to the upper portion of the photoelectric conversion layer by a dry lamination.

18. The method according to claim 15, wherein the photoelectric conversion layer is prepared on the stacked electrode.

19. The method according to claim 15, wherein the counter electrode is an electrode obtained by stacking an ITO and a silver alloy.

20. The method according to claim 15, wherein the counter electrode is a metal foil.

21. The method according to claim 15, wherein the stacked electrode consists of the multi-layered graphene film, the metal wire, and the polymer.