Additive composition and positive polishing slurry composition including the same

• US 10,494,547 B2
• Filed: 12/15/2016
• Issued: 12/03/2019
• Est. Priority Date: 12/24/2015
• Status: Active Grant

• Current Assignee: Kctech Co., Ltd.
• Original Assignee: Kctech Co., Ltd.
• Inventors: Kwon, Jang Kuk, Lee, Sung Pyo, Kwon, Chang Gil, Hwang, Jun Ha
• Primary Examiner(s): Ahmed, Shamim
• Application Number:
  US15/379,861
• Publication Number:
  US 20170183538A1
• Time in Patent Office: 1,083 Days
• Field of Search: None
• CPC Class Codes: C09G 1/02 containing abrasives or grinding agents abrasives as such C09K3/14; polishing of semi-conductors H01L
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step

Abstract

An additive composition and a positive polishing slurry composition including the additive composition are provided. The additive composition includes a cationic compound, an organic acid, a nonionic compound, and a pH adjuster.

Claims

1. An additive composition comprising:

a cationic compound;

an organic acid;

a nonionic compound; and

a pH adjuster,

wherein a ratio of the cationic compound to the organic acid in the additive composition is from 2;

1 to 3;

1, and

wherein each of the cationic compound and the organic acid is present in an amount of 0.001 wt % to 5 wt % in the additive composition,

wherein the cationic compound is at least one selected from the group consisting of poly[bis(2-chloroethyl) ether-alt-1,3-bis[3-(dimethylamino)propyl]urea], histidine, and serine,

wherein the organic acid comprises at least one selected from the group consisting of lactic acid and glycolic acid,

wherein the nonionic compound is a polyethylene glycol (PEG),

wherein dishing of 200 {acute over (Å

)} or less occurs, after a wafer that includes an oxide film and either a nitride film or a polysilicon film and that has a line-and-space pattern with a line width of 100 μ

m and a pitch less than 100 μ

m is polished using a positive polishing slurry composition comprising the additive composition, and

wherein dishing of 320 {acute over (Å

)} or less occurs, after a wafer that includes an oxide film and either a nitride film or a polysilicon film and that has a line-and-space pattern with a line width of 100 μ

m or greater and 1 mm or less and a pitch of 100 μ

m or greater and 1 mm or less is polished using a positive polishing slurry composition comprising the additive composition.

2. The additive composition of claim 1, wherein the nonionic compound is present in an amount of from 0.001 wt % to 1 wt % in the additive composition.

3. The additive composition of claim 1, wherein the pH adjuster comprises at least one selected from the group consisting of:

an acidic material comprising at least one selected from the group consisting of nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, bromic acid, iodic acid, formic acid, malonic acid, maleic acid, oxalic acid, acetic acid, adipic acid, citric acid, propionic acid, fumaric acid, lactic acid, salicylic acid, pimelic acid, benzoic acid, succinic acid, phthalic acid, butyric acid, glutaric acid, glutamic acid, glycolic acid, asparaginic acid, tartaric acid and salts thereof; and

an alkaline material comprising at least one selected from the group consisting of ammonia, amino methyl propanol (AMP), potassium hydroxide, sodium hydroxide, magnesium hydroxide, rubidium hydroxide, cesium hydroxide, sodium hydrogen carbonate, sodium carbonate and imidazole.

4. The additive composition of claim 1, wherein the additive composition has a pH of from 2 to 7.

5. A positive polishing slurry composition comprising:

the additive composition of claim 1; and

a slurry composition comprising abrasive particles.

6. The positive polishing slurry composition of claim 5, wherein a polishing selectivity of an oxide film:

a nitride film or the oxide film;

a polysilicon film ranges from 10;

1 to 80;

1 during polishing of a blanket wafer including the oxide film and either the nitride film or the polysilicon film using the positive polishing slurry composition.

7. The positive polishing slurry composition of claim 6, wherein the oxide film has a polishing rate of 2,000 angstroms per minute ({acute over (Å

)}/min) to 4,000 {acute over (Å

)}/min, and

wherein the nitride film or the polysilicon film has a polishing rate of 20 {acute over (Å

)}/min to 200 {acute over (Å

)}/min.

8. The positive polishing slurry composition of claim 5, wherein a polishing selectivity of an oxide film:

a nitride film or the oxide film;

a polysilicon film ranges from 1;

1 to 5;

1 during polishing of a pattern wafer including the oxide film and either the nitride film or the polysilicon film using the positive polishing slurry composition.

9. The additive composition of claim 1, wherein the amount of each of the cationic compound and the organic acid in the additive composition is from 0.01 wt % to 3 wt %.