Semiconductor material doping

  • US 10,497,829 B2
  • Filed: 12/28/2017
  • Issued: 12/03/2019
  • Est. Priority Date: 12/04/2009
  • Status: Active Grant
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First Claim
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1. A device comprising:

  • a group III nitride ultraviolet radiation generating structure; and

    a p-type group III nitride superlattice layer at least partially transparent to ultraviolet radiation generated by the ultraviolet radiation generating structure, wherein the superlattice layer comprises a set of quantum wells and barriers, wherein a valence band discontinuity between a quantum well and an immediately adjacent barrier in the superlattice layer is such that a dopant energy level of a dopant in the immediately adjacent barrier in the superlattice layer is within three thermal energies of at least one of;

    a valence energy band edge for the quantum well or a ground state energy for free carriers in a valence energy band for the quantum well.

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