Carrier-bonding methods and articles for semiconductor and interposer processing

• US 10,510,576 B2
• Filed: 10/10/2014
• Issued: 12/17/2019
• Est. Priority Date: 10/14/2013
• Status: Active Grant

• Current Assignee: Corning Incorporated
• Original Assignee: Corning Incorporated
• Inventors: Enicks, Darwin Gene, Keech, John Tyler, Shorey, Aric Bruce, Thomas, III, Windsor Pipes
• Primary Examiner(s): Hossain, Moazzam
• Assistant Examiner(s): Isaac, Stanetta D
• Application Number:
  US14/511,411
• Publication Number:
  US 20150102498A1
• Time in Patent Office: 1,894 Days
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 21/6835 using temporarily an auxiliary support
• CPC Class Codes: H01L 2221/68318 Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2221/68331 of passive members, e.g. die mounting substrate
• CPC Class Codes: H01L 2221/68345 used as a support during the manufacture of self supporting substrates
• CPC Class Codes: H01L 2221/68381 Details of chemical or physical process used for separating the auxiliary support from a device or wafer
• CPC Class Codes: H01L 2224/83052 Detaching layer connectors, e.g. after testing unsoldering in general B23K1/018
• CPC Class Codes: H01L 2224/8385 using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 23/15 Ceramic or glass substrates H01L23/142, H01L23/145, H01L23/147 take precedence
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 24/83 using a layer connector
• CPC Class Codes: H01L 24/94 at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/05432 Al2O3
• CPC Class Codes: H01L 2924/05442 SiO2
• CPC Class Codes: H01L 2924/10253 Silicon [Si]
• CPC Class Codes: H01L 2924/10271 Silicon-germanium [SiGe]
• CPC Class Codes: H01L 2924/10329 Gallium arsenide [GaAs]
• CPC Class Codes: H01L 2924/1033 : Gallium nitride [GaN]
• CPC Class Codes: H01L 2924/12 : Passive devices, e.g. 2 terminal devices
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/1432 : Central processing unit [CPU]
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/15788 : Glasses, e.g. amorphous oxides, nitrides or fluorides
• CPC Class Codes: H01L 2924/201 : Temperature ranges
• CPC Class Codes: H01L 2924/20107 : Temperature range 250 C=<T<300 C, 523.15K =<T< 573.15K
• CPC Class Codes: H01L 2924/2011 : Temperature range 400 C=<T<450 C, 673.15K =<T< 723.15K
• CPC Class Codes: H01L 2924/2064 : larger or equal to 1 micron less than 100 microns
• CPC Class Codes: H01L 2924/20641 : larger or equal to 100 microns less than 200 microns
• CPC Class Codes: H01L 2924/20642 : larger or equal to 200 microns less than 300 microns

Abstract

A thin sheet (20) disposed on a carrier (10) via a surface modification layer (30) to form an article (2), wherein the article may be subjected to high temperature processing, as in FEOL semiconductor processing, not outgas and have the thin sheet maintained on the carrier without separation therefrom during the processing, yet be separated therefrom upon room temperature peeling force that leaves the thinner one of the thin sheet and carrier intact. Interposers (56) having arrays (50) of vias (60) may be formed on the thin sheet, and devices (66) formed on the interposers. Alternatively, the thin sheet may be a substrate on which semiconductor circuits are formed during FEOL processing.

Claims

1. An article, comprising:

a carrier with a carrier bonding surface;

a wafer sheet with at least one via therein, the sheet further comprising a sheet bonding surface;

a surface modification layer;

the carrier bonding surface being bonded with the sheet bonding surface with the surface modification layer therebetween, the surface modification layer being in direct contact with both the carrier bonding surface and the sheet bonding surface, wherein the surface modification layer is of such a character that at least one of;

(i) after subjecting the article to a temperature cycle by heating in an chamber cycled from room temperature to 600°

C. at a rate of 9.2°

C. per minute, held at a temperature of 600°

C. for 10 minutes, and then cooled at furnace rate to 300°

C., and then removing the article from the chamber and allowing the article to cool to room temperature, the carrier and sheet do not separate from one another if one is held and the other subjected to the force of gravity, and the sheet may be separated from the carrier without breaking the carrier and the sheet into two or more pieces when separation of the sheet from the carrier is performed at room temperature; and

(ii) after subjecting the article to a temperature cycle by heating in an chamber cycled from room temperature to 400°

C. at a rate of 9.2°

C. per minute, held at a temperature of 400°

C. for 10 minutes, and then cooled at furnace rate to 300°

C., and then removing the article from the chamber and allowing the article to cool to room temperature, the carrier and sheet do not separate from one another if one is held and the other subjected to the force of gravity, there is no outgassing from the surface modification layer according to Outgassing TEST #2, and the sheet may be separated from the carrier without breaking the carrier and the sheet into two or more pieces when separation of the sheet from the carrier is performed at room temperature, wherein Outgassing TEST #2 is performing the following steps, in order;

scanning the article with an Epson Expression 10000XL Photo desktop scanner, in transmission mode, to make a first scan of the area bonding the thin sheet and carrier after assembling the article, and before time-temperature cycling of the article, wherein the desktop scanner is operated with the standard Epson software using 508 dpi (50 micron/pixel) and 24 bit RGB;

using image processing software to prepare a first image by stitching, as necessary, scans of different sections of the article into the first image, and removing scanner artifacts by using a calibration reference scan performed without an article in the scanner;

analyzing the first image of the bonded area using image processing techniques of thresholding, hole filling, erosion/dilation, and blob analysis, as necessary;

determining a first bubble area by totaling bubble areas visible in the first image;

comparing the first bubble area with the total bonding area to calculate a first percent bubble area of the bubbles in the bonding area relative to the total bonding area;

putting the article through the desired time-temperature cycle, by processing in a MPT-RTP600s Rapid Thermal Processing system under N2 atmosphere;

scanning the article a second time with the scanner, and processing in the above-noted manner to determine a second percent bubble area;

calculating a change in percent bubble area by determining the difference between the first percent bubble area and the second percent bubble area;

wherein outgassing is evidenced if the change in percent bubble area is ≥

5.

2. The article of claim 1, wherein the sheet comprises silicon, quartz, sapphire, ceramic, or glass.

3. The article of claim 1, at least one via has a diameter of 150 microns and comprises electrically conductive material therein.

4. The article of claim 1, the sheet comprising a device surface opposite the sheet bonding surface, the device surface comprising an array of devices selected from the group consisting of:

integrated circuits;

MEMS;

CPU;

microsensors;

power semiconductors;

light-emitting diodes;

photonic circuits;

interposers;

embedded passive devices; and

microdevices fabricated on or from silicon, silicon-germanium, gallium arsenide, and gallium nitride.

5. The article of claim 1, wherein there is no outgassing from the surface modification layer during the heating, wherein outgassing from the surface modification layer is defined as at least one of:

(a) wherein the change in surface energy of the cover is ≥

15 mJ/m² at a test-limit temperature of 600°

C. according to Outgassing TEST #1, wherein Outgassing TEST #1 is performing the following steps, in order;

disposing the to-be-tested surface modification layer on a first substrate;

placing a second substrate so that a first one of its surfaces is in close proximity to the surface of the first substrate having the surface modification layer thereon, but not in contact therewith, wherein the first surface is an uncoated surface;

disposing spacers between the first substrate and the second substrate to hold them in spaced relation from one another, wherein the spacers are thick enough to separate the first substrate from the second substrate to allow a movement of material from one to the other, wherein the first substrate, the spacers, and the second sheet, together form a test article;

prior to assembly of the test article, measuring the surface energy of the first surface as value 1;

after assembly, placing the test article into a heating chamber, and heating the article through a desired time-temperature cycle, wherein the heating is performed at atmospheric pressure and under flowing N2 gas at a rate of 2 standard liters per minute;

after the desired time-temperature cycle, measuring the surface energy of the first surface as value 2;

comparing value 1 and value 2, wherein outgassing is evidenced if value 2 is higher than value 1 by ≥

10 mJ/m2; and

(b) wherein the change in % bubble area is 2;

5 at a test limit temperature of 600°

C. according to Outgassing TEST #2, wherein Outgassing TEST #2 is performing the following steps, in order;

scanning the article with an Epson Expression 10000XL Photo desktop scanner, in transmission mode, to make a first scan of the area bonding the thin sheet and carrier after assembling the article, and before time-temperature cycling of the article, wherein the desktop scanner is operated with the standard Epson software using 508 dpi (50 micron/pixel) and 24 bit RGB;

using image processing software to prepare a first image by stitching, as necessary, scans of different sections of the article into the first image, and removing scanner artifacts by using a calibration reference scan performed without an article in the scanner;

analyzing the first image of the bonded area using image processing techniques of thresholding, hole filling, erosion/dilation, and blob analysis, as necessary;

determining a first bubble area by totaling bubble areas visible in the first image;

comparing the first bubble area with the total bonding area to calculate a first percent bubble area of the bubbles in the bonding area relative to the total bonding area;

putting the article through the desired time-temperature cycle, by processing in a MPT-RTP600s Rapid Thermal Processing system under N2 atmosphere;

scanning the article a second time with the scanner, and processing in the above-noted manner to determine a second percent bubble area;

calculating a change in percent bubble area by determining the difference between the first percent bubble area and the second percent bubble area;

wherein outgassing is evidenced if the change in percent bubble area is 5.

6. The article of claim 1, the surface modification layer comprises one of:

a) a plasma polymerized fluoropolymer; and

b) an aromatic silane.

7. An article, comprising:

a carrier with a carrier bonding surface;

a wafer sheet comprising a thickness 200 microns, the sheet further comprising a sheet bonding surface, the sheet comprising silicon, quartz, or sapphire;

a surface modification layer;

the carrier bonding surface being bonded with the sheet bonding surface with the surface modification layer there between, the surface modification layer being in direct contact with both the carrier bonding surface and the sheet bonding surface, wherein the surface modification layer is of such a character that at least one of;

(i) after subjecting the article to a temperature cycle by heating in an chamber cycled from room temperature to 600°

C. at a rate of 9.2°

C. per minute, held at a temperature of 600°

C. for 10 minutes, and then cooled at furnace rate to 300°

C., and then removing the article from the chamber and allowing the article to cool to room temperature, the carrier and sheet do not separate from one another if one is held and the other subjected to the force of gravity, and the sheet may be separated from the carrier without breaking the carrier and the sheet into two or more pieces when separation of the sheet from the carrier is performed at room temperature; and

(ii) after subjecting the article to a temperature cycle by heating in an chamber cycled from room temperature to 400°

C. at a rate of 9.2°

C. per minute, held at a temperature of 400°

C. for 10 minutes, and then cooled at furnace rate to 300°

C., and then removing the article from the chamber and allowing the article to cool to room temperature, the carrier and sheet do not separate from one another if one is held and the other subjected to the force of gravity, there is no outgassing from the surface modification layer according to Outgassing TEST #2, and the sheet may be separated from the carrier without breaking the carrier and the sheet into two or more pieces when separation of the sheet from the carrier is performed at room temperature, wherein Outgassing TEST #2 is performing the following steps, in order;

scanning the article with an Epson Expression 10000XL Photo desktop scanner, in transmission mode, to make a first scan of the area bonding the thin sheet and carrier after assembling the article, and before time-temperature cycling of the article, wherein the desktop scanner is operated with the standard Epson software using 508 dpi (50 micron/pixel) and 24 bit RGB;

using image processing software to prepare a first image by stitching, as necessary, scans of different sections of the article into the first image, and removing scanner artifacts by using a calibration reference scan performed without an article in the scanner;

analyzing the first image of the bonded area using image processing techniques of thresholding, hole filling, erosion/dilation, and blob analysis, as necessary;

determining a first bubble area by totaling bubble areas visible in the first image;

comparing the first bubble area with the total bonding area to calculate a first percent bubble area of the bubbles in the bonding area relative to the total bonding area;

putting the article through the desired time-temperature cycle, by processing in a MPT-RTP600s Rapid Thermal Processing system under N2 atmosphere;

scanning the article a second time with the scanner, and processing in the above-noted manner to determine a second percent bubble area;

calculating a change in percent bubble area by determining the difference between the first percent bubble area and the second percent bubble area;

wherein outgassing is evidenced if the change in percent bubble area is ≥

5.

8. An article, comprising:

a carrier with a carrier bonding surface;

a wafer sheet with at least one via therein, the sheet further comprising a sheet bonding surface;

a surface modification layer;

wherein the surface modification layer is disposed uniformly over the carrier bonding surface; and

the carrier bonding surface being bonded with the sheet bonding surface with the surface modification layer therebetween, the surface modification layer being in direct contact with both the carrier bonding surface and the sheet bonding surface, wherein the surface modification layer is of such a character that at least one of;

(i) after subjecting the article to a temperature cycle by heating in an chamber cycled from room temperature to 500°

C. at a rate of 9.2°

C. per minute, held at a temperature of 500°

C. for 10 minutes, and then cooled at furnace rate to 300°

C., and then removing the article from the chamber and allowing the article to cool to room temperature, the carrier and sheet do not separate from one another if one is held and the other subjected to the force of gravity, and the sheet may be separated from the carrier without breaking the carrier and the sheet into two or more pieces when separation of the sheet from the carrier is performed at room temperature; and

(ii) after subjecting the article to a temperature cycle by heating in an chamber cycled from room temperature to 400°

C. at a rate of 9.2°

C. per minute, held at a temperature of 400°

C. for 10 minutes, and then cooled at furnace rate to 300°

C., and then removing the article from the chamber and allowing the article to cool to room temperature, the carrier and sheet do not separate from one another if one is held and the other subjected to the force of gravity, there is no outgassing from the surface modification layer according to Outgassing TEST #2, and the sheet may be separated from the carrier without breaking the carrier and the sheet into two or more pieces when separation of the sheet from the carrier is performed at room temperature, wherein Outgassing TEST #2 is performing the following steps, in order;

scanning the article with an Epson Expression 10000XL Photo desktop scanner, in transmission mode, to make a first scan of the area bonding the thin sheet and carrier after assembling the article, and before time-temperature cycling of the article, wherein the desktop scanner is operated with the standard Epson software using 508 dpi (50 micron/pixel) and 24 bit RGB;

using image processing software to prepare a first image by stitching, as necessary, scans of different sections of the article into the first image, and removing scanner artifacts by using a calibration reference scan performed without an article in the scanner;

analyzing the first image of the bonded area using image processing techniques of thresholding, hole filling, erosion/dilation, and blob analysis, as necessary;

determining a first bubble area by totaling bubble areas visible in the first image;

comparing the first bubble area with the total bonding area to calculate a first percent bubble area of the bubbles in the bonding area relative to the total bonding area;

putting the article through the desired time-temperature cycle, by processing in a MPT-RTP600s Rapid Thermal Processing system under N2 atmosphere;

scanning the article a second time with the scanner, and processing in the above-noted manner to determine a second percent bubble area;

calculating a change in percent bubble area by determining the difference between the first percent bubble area and the second percent bubble area;

wherein outgassing is evidenced if the change in percent bubble area is 5.

9. The article of claim 8, wherein the sheet comprises silicon, quartz, sapphire, ceramic, or glass.

10. The article of claim 8, at least one via has a diameter of 150 microns and comprises electrically conductive material therein.

11. The article of claim 8, the sheet comprising a device surface opposite the sheet bonding surface, the device surface comprising an array of devices selected from the group consisting of:

integrated circuits;

MEMS;

CPU;

microsensors;

power semiconductors;

light-emitting diodes;

photonic circuits;

interposers;

embedded passive devices; and

microdevices fabricated on or from silicon, silicon-germanium, gallium arsenide, and gallium nitride.

12. The article of claim 8, wherein there is no outgassing from the surface modification layer during the heating, wherein outgassing from the surface modification layer is defined as at least one of:

(a) wherein the change in surface energy of the cover is ≥

15 mJ/m² at a test-limit temperature of 600°

C. according to Outgassing TEST #1, wherein Outgassing TEST #1 is performing the following steps, in order;

disposing the to-be-tested surface modification layer on a first substrate;

placing a second substrate so that a first one of its surfaces is in close proximity to the surface of the first substrate having the surface modification layer thereon, but not in contact therewith, wherein the first surface is an uncoated surface;

disposing spacers between the first substrate and the second substrate to hold them in spaced relation from one another, wherein the spacers are thick enough to separate the first substrate from the second substrate to allow a movement of material from one to the other, wherein the first substrate, the spacers, and the second sheet, together form a test article;

prior to assembly of the test article, measuring the surface energy of the first surface as value 1;

after assembly, placing the test article into a heating chamber, and heating the article through a desired time-temperature cycle, wherein the heating is performed at atmospheric pressure and under flowing N2 gas at a rate of 2 standard liters per minute;

after the desired time-temperature cycle, measuring the surface energy of the first surface as value 2;

comparing value 1 and value 2, wherein outgassing is evidenced if value 2 is higher than value 1 by ≥

10 mJ/m2; and

(b) wherein the change in % bubble area is 2;

5 at a test limit temperature of 600°

C. according to Outgassing TEST #2, wherein Outgassing TEST #2 is performing the following steps, in order;

scanning the article with an Epson Expression 10000XL Photo desktop scanner, in transmission mode, to make a first scan of the area bonding the thin sheet and carrier after assembling the article, and before time-temperature cycling of the article, wherein the desktop scanner is operated with the standard Epson software using 508 dpi (50 micron/pixel) and 24 bit RGB;

using image processing software to prepare a first image by stitching, as necessary, scans of different sections of the article into the first image, and removing scanner artifacts by using a calibration reference scan performed without an article in the scanner;

analyzing the first image of the bonded area using image processing techniques of thresholding, hole filling, erosion/dilation, and blob analysis, as necessary;

determining a first bubble area by totaling bubble areas visible in the first image;

comparing the first bubble area with the total bonding area to calculate a first percent bubble area of the bubbles in the bonding area relative to the total bonding area;

putting the article through the desired time-temperature cycle, by processing in a MPT-RTP600s Rapid Thermal Processing system under N2 atmosphere;

scanning the article a second time with the scanner, and processing in the above-noted manner to determine a second percent bubble area;

calculating a change in percent bubble area by determining the difference between the first percent bubble area and the second percent bubble area;

wherein outgassing is evidenced if the change in percent bubble area is 5.

13. The article of claim 8, the surface modification layer comprises one of:

a) a plasma polymerized fluoropolymer; and

b) an aromatic silane.