Composite transparent electrode, OLED and method for manufacturing thereof, array substrate and display device

• US 10,510,979 B2
• Filed: 08/18/2017
• Issued: 12/17/2019
• Est. Priority Date: 02/17/2017
• Status: Active Grant

• Current Assignee: BOE Technology Group Co., Ltd.
• Original Assignee: BOE Technology Group Co., Ltd.
• Inventors: You, Juanjuan, Wu, Changyen
• Primary Examiner(s): Hoang, Quoc D
• Application Number:
  US15/754,526
• Publication Number:
  US 20190027702A1
• Time in Patent Office: 851 Days
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: H10K 2102/101 comprising transparent conductive oxides [TCO]
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 2102/351 Thickness
• CPC Class Codes: H10K 50/813 characterised by their shape
• CPC Class Codes: H10K 50/816 Multilayers, e.g. transparent multilayers
• CPC Class Codes: H10K 50/822 characterised by their shape
• CPC Class Codes: H10K 50/824 combined with auxiliary electrodes
• CPC Class Codes: H10K 50/828 Transparent cathodes, e.g. comprising thin metal layers
• CPC Class Codes: H10K 59/35 comprising red-green-blue [RGB] subpixels
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/60 Forming conductive regions or layers, e.g. electrodes

Abstract

A composite transparent electrode, an organic light-emitting diode and a method for manufacturing thereof, an array substrate and a display device. In the composite transparent electrode, a cover layer (12) is provided between a metal layer (11) and a transparent conducting oxide layer (13), the transparent conducting oxide layer (13) is electrically connected to the metal layer (11). The composite transparent electrode can reduce damages to the metal layer (11) or decrease pressure fall during a sputtering process.

Claims

1. An organic light-emitting diode, comprising a first electrode, a second electrode, and an organic light-emitting functional layer located between the first electrode and the second electrode, wherein the second electrode is a composite transparent electrode, the composite transparent electrode comprising:

a metal layer;

a transparent conducting oxide layer, wherein the transparent conducting oxide layer is located on a side of the metal layer away from the organic light-emitting functional layer; and

a transparent cover layer located between the metal layer and the transparent conducting oxide layer,

wherein the metal layer is electrically connected to the transparent conducting oxide layer;

wherein the transparent cover layer has at least one first through-hole, through which the metal layer is electrically connected to the transparent conducting oxide layer;

wherein the at least one first through-hole comprises a material of the transparent conducting oxide layer therein; and

wherein the at least one first through-hole is a bar-shaped structure.

2. The organic light-emitting diode according to claim 1, wherein a material of the transparent cover layer comprises a metal oxide having a dielectric constant ε

in a range of ε

>

10.

3. The organic light-emitting diode according to claim 2, wherein the transparent cover layer is insulated.

4. The organic light-emitting diode according to claim 2, wherein the metal oxide is selected from a group of Ga₂O₃, CaO and WO₃.

5. The organic light-emitting diode according to claim 1, wherein the transparent cover layer has a thickness in a range of 1 to 40 nm.

6. The organic light-emitting diode according to claim 1, wherein the transparent cover layer directly contacts the metal layer.

7. The organic light-emitting diode according to claim 1, wherein the metal layer has a thickness in a range of 1 to 20 nm.

8. The organic light-emitting diode according to claim 1, wherein the metal layer is a transparent metal layer.

9. The organic light-emitting diode according to claim 1, wherein the transparent conducting oxide layer has a thickness in a range of 50 to 500 nm.

10. The organic light-emitting diode according to claim 1, wherein an orthographic projection of the transparent conducting oxide layer on the metal layer is located within an area in which the metal layer is located.

11. The organic light-emitting diode according to claim 1, wherein the organic light-emitting functional layer comprises a plurality of subpixels and at least one second hole, wherein the at least one second hole is between adjacent subpixels, and the transparent cover layer covers the subpixels.

12. The organic light-emitting diode according to claim 11, wherein along a direction in which the plurality of subpixels are arranged, a size of the at least one first through-hole is less than or equal to that of the at least one second hole.

13. The organic light-emitting diode according to claim 11, wherein an orthographic projection of the subpixels on the metal layer of the composite transparent electrode is located within the orthographic projection of the transparent cover layer on the metal layer.

14. A composite transparent electrode, comprising:

a metal layer;

a transparent conducting oxide layer; and

a transparent cover layer located between the metal layer and the transparent conducting oxide layer,

wherein the metal layer is electrically connected to the transparent conducting oxide layer;

wherein the transparent cover layer has at least one first through-hole, through which the metal layer is electrically connected to the transparent conducting oxide layer;

wherein the at least one first through-hole comprises a material of the transparent conducting oxide layer therein; and

wherein the at least one first through-hole is a bar-shaped structure.

15. The composite transparent electrode according to claim 14, wherein

the transparent cover layer exposes a periphery of the metal layer, and a periphery of the transparent conducting oxide layer extends towards the metal layer and is electrically connected to the periphery of the metal layer that is exposed by the transparent cover layer.

16. A method for manufacturing an organic light-emitting diode, comprising:

forming a first electrode and an organic light-emitting functional layer; and

forming the composite transparent electrode according to claim 14 on the organic light-emitting functional layer, wherein the transparent conducting oxide layer is located on a side of the metal layer away from the organic light-emitting functional layer.

17. The method for manufacturing an organic light-emitting diode according to claim 16, wherein the transparent conducting oxide layer is formed by a sputtering process.

18. An array substrate, comprising an electrode layer, the composite transparent electrode according to claim 14, and an organic light-emitting functional layer located between the electrode layer and the composite transparent electrode, wherein the electrode layer comprises a plurality of sub-electrodes, and the organic light-emitting functional layer comprises a plurality of subpixels.