Display panel, display device and method for preparing a low-temperature polysilicon thin film transistor

  • US 10,515,984 B1
  • Filed: 10/18/2017
  • Issued: 12/24/2019
  • Est. Priority Date: 09/26/2017
  • Status: Active Grant
First Claim
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1. A method for preparing a low-temperature polysilicon thin film transistor, comprising the following steps:

  • providing a base substrate;

    forming a semiconducting layer on the base substrate;

    forming a first insulating layer on the semiconducting layer;

    forming a first metal layer on the first insulation layer and patterning the first metal layer to obtain a first metal gate layer;

    forming a second insulating layer on the first metal layer;

    forming a second metal layer on the second insulation layer and patterning the second metal layer to obtain a second metal gate layer, wherein the first metal gate layer is connected to the second metal gate layer;

    forming a third insulating layer on the second metal layer; and

    forming a third metal layer on the third insulation layer and patterning the third metal layer to form a source and a drain, wherein the source and the drain are connected to the semiconducting layer.

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